Fractional-N Frequency Synthesizer PLL

Overview

Widely programmable fractional-N delta sigma frequency synthesizer. Low Power/ Low Area hard macro with industry leading jitter performance for its power/area class.

Product is currently in mass production from 3nm to 180nm.

Integer-only, DDR/multi-phase, LC and low-jitter ring PLLs also available.

Key Features

Wide functional range allows all frequencies in a system to be synthesized with one PLL macro
Input & output frequency ranges greater than 1000:1
Program while running to optimize for lowest jitter or lowest power
Automatically adjusts for any input frequency, so no complicated programming is required
24 bit fractional resolution so output frequency is programmable in steps less than 0.01ppm
Noise Cancellation DAC enables ultra-low jitter in fractional mode -- better than "Low jitter" integer PLLs from many others
Small footprint
Built-in supply decoupling. No external components required
Low area on chip -- keepouts = 0 in many cases
Optional Spread Spectrum clock generation capability

Benefits

Wide functional range allows all frequencies in a system to be synthesized with one PLL macro
PLL can be programmed while running to optimize for lowest jitter or lowest power - Programmable to use less than 1mW for less demanding clocks, yet can also be programmed to generate a PCIe1/2/3 compliant spread-spectrum reference clock or DDR 6400 reference.
Low area on chip -- keepouts = DRC limit in most cases
No external components required
No additional supply decoupling required
Self biased and automatically adjusts for any input frequency, so no complicated programming is required

Block Diagram

Deliverables

GDSII
CDL Netlist (MG Calibre Compatible)
Functional Verilog Model
Liberty timing models (.lib)
LEF
Application Note

Technical Specifications

Foundry, Node

TSMC 3nm, 4nm, 5nm, 6nm, 7nm, 12nm, 16nm, 22nm, 28nm, 40nm, 55nm, 65nm, 90nm, 130nm, 180nm; Samsung ... 3nm to 90nm; Global Foundries; GF 12nm - 65nm; UMC

Maturity

In Production

Availability

Available Now

GLOBALFOUNDRIES

In Production: 22nm FDX , 28nm FDSOI , 28nm SLP , 40nm LP , 65nm , 65nm LP , 65nm LPe
Pre-Silicon: 55nm LPX
Silicon Proven: 12nm , 14nm LPP , 28nm HPP , 55nm

Intel Foundry

Pre-Silicon: 16nm

Renesas

In Production: 90nm

SMIC

In Production: 14nm , 28nm HK , 28nm HKC+ , 28nm PS , 40nm LL , 55nm LL , 65nm LL , 130nm G , 180nm G
Pre-Silicon: 90nm G , 90nm LL
Silicon Proven: 55nm G , 110nm G

Samsung

In Production: 5nm , 28nm FDS
Pre-Silicon: 8nm
Silicon Proven: 4nm , 7nm , 10nm

TSMC

In Production: 3nm , 4nm , 5nm , 6nm , 7nm , 10nm , 12nm , 16nm , 22nm , 28nm HPC , 28nm HPCP , 28nm HPM , 40nm G , 40nm LP , 45nm GS , 45nm LP , 55nm GP , 55nm LP , 65nm G , 65nm GP , 65nm LP , 90nm G , 130nm G , 180nm G
Pre-Silicon: 28nm HPL , 28nm LP , 55nm G , 80nm , 80nm GT , 80nm HS , 90nm GOD , 90nm GT , 90nm zzz , 110nm G , 110nm LVP , 130nm LP , 130nm LV , 130nm LVOD
Silicon Proven: 28nm HP , 55nm GP , 55nm ULP , 90nm LP , 130nm

Tower

Pre-Silicon: 130nm

UMC

In Production: 28nm HLP , 28nm HPC , 40nm LP
Pre-Silicon: 65nm LL , 90nm G , 90nm LL , 130nm
Silicon Proven: 28nm HPM , 55nm

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