Bi-Directional LVDS with LVCMOS

Overview

The bi-directional LVDS is in production from 90nm CMOS to 16/12nm FinFET and taped out in 7nm FinFET. This LVDS I/O is highly programmable and is an excellent IO for FPGA to ASIC conversions.

LVDS-based Interfaces

Based on this versatile LVDS circuit and our robust PLLs and CDR architecture we developed multiple uni-directional and bi-directional parallel source-synchronous interfaces for Chip-chip and Video data transmission. These interfaces can comply with custom chip-chip (or chip-FPGA) requirements or standards including FPDLink, FastLVDS, miniLVDS, FPD Link, Camera Link and OpenLDI.  A dynamic phase alignment and robust word alignment architecture enables data rates exceeding 190Mpixels/s (1.34Gb/s in each lane) for FPD-link and up to 3.3Gbps/lane in some cases. 

Key Features

  • TIA/EIA644A LVDS and sub-LVDS compatibility
  • Receiver also compatible with LVPECL
  • Operates over 2Gbps and up to 3Gb/s in some processes
  • Trimmable on-die termination, can be enabled while Tx is operating for better signal integrity
  • Independent LVCMOS input and output functions

Benefits

  • Wide operating range
  • High data rates
  • Very flexible programmability
  • Excellent signal integrity

Block Diagram

Bi-Directional LVDS with LVCMOS Block Diagram

Deliverables

  • GDSII
  • CDL Netlist (MG Calibre Compatible)
  • Functional Verilog Model
  • Liberty timing models (.lib)
  • LEF
  • Application Note with integration and production test guidelines

Technical Specifications

Foundry, Node
TSMC 5FF, 6FF, 7FF, 12FFC, 16FFC, 28HPC+, 40LP, 65LP, 90G
Maturity
Mass Production
Availability
Available Now
GLOBALFOUNDRIES
Silicon Proven: 40nm LP
SMIC
Pre-Silicon: 40nm LL , 65nm LL , 90nm G
TSMC
In Production: 5nm , 7nm , 12nm , 16nm , 28nm HPC , 28nm HPCP , 40nm LP , 65nm LP , 90nm G
Silicon Proven: 6nm , 22nm , 28nm HPM
×
Semiconductor IP