Temperature Sensor Digital Output Intel

Overview

The agileTSENSE_D temperature sensor is a ?VBE temperature sensor with an integrated ADC to provide a digital output. On modern SoCs, temperature sensing is critical for detection of security attacks and optimization of power, performance, and area.

Key Features

Measurement Range: -20°C to +100°C
Uncalibrated Accuracy: ±6°C
Calibrated Accuracy:
- 0°C to +70°C = ±1°C
- -20°C to +100°C = ±1.5°C
- -40°C to +125°C = ±2°C
Digital Readout: -20°C to +100°C = ±1.5°C
LSB Size: 0.25°C
INL 4LSBs max
DNL 0.5 LSB max
Start-up Time: 50us typ.
Current Consumption: 180uA typ
Customizable design for simple SoC integration

Benefits

DFT/DFM: Built-in voltage trim to facilitate process and/or manufacturing offsets to be adjusted
Analog test bus to aid DFT/DFM test

Applications

IoT, Security, Automotive, AI, SoCs, ASICs

Deliverables

Datasheet
Testing and Integration Guide
Verilog Models
Floorplan (LEF)
Timing models (LIB)
Netlist (CDL)
Layout (GDS)
Physical Verification Report
Design Report

Technical Specifications

Foundry, Node

Intel Foundry

Maturity

Available on request

Availability

Now

TSMC

Pre-Silicon: 3nm , 4nm , 5nm , 6nm , 7nm , 10nm , 12nm , 16nm , 20nm , 22nm , 28nm , 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPL , 28nm HPM , 28nm LP , 40nm G , 40nm LP , 45nm GS , 45nm LP , 55nm FL , 55nm G , 55nm GP , 55nm LP , 55nm NF , 55nm ULP , 55nm ULPEF , 55nm UP , 65nm G , 65nm GP , 65nm LP , 80nm , 80nm GT , 80nm HS , 85nm , 90nm FS , 90nm FT , 90nm G , 90nm GOD , 90nm GT , 90nm LP , 90nm zzz , 110nm G , 110nm HV , 110nm LVP , 130nm , 130nm BCD , 130nm BCD+ , 130nm G , 130nm LP , 130nm LV , 130nm LVOD , 150nm G , 150nm LV , 160nm G , 160nm LP , 180nm , 180nm E , 180nm ELL , 180nm FG , 180nm G , 180nm LP , 180nm LV , 180nm ULL

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