IR DROP TSMC

Overview

The agileIRDrop I-R Drop Sensor is a circuit to detect supply supply I-R drops within the system. It is useful to detect loss of power or attacks to the power supply.

The agileIRDrop consists of a voltage reference and comparator(s) set at different threshold levels for multi-level detection. The number of trigger outputs can be customized, and each threshold can be adjusted during operation to support DVFS operation. A four-output configuration is shown in the block diagram as reference.

Agile Analog designs are based on tried and tested architectures to ensure reliability and functionality. Our design methodology is programmatic, systematic, and repeatable, leading to analog IP that is more verifiable, more robust and more reliable.

Key Features

  • • Active current current: 120uA
  • • Powered-down current: <1uA
  • • Detection time: 25nS typ.
  • • Hysteresis: 20mV typ.
  • • Threshold step size: 20mV typ.
  • • Threshold accuracy: 5%/1% (trimmed)
  • • Silicon area: Please contact Agile Analog
  • Operation over wide temperature range: -40C to 125C

Benefits

  • Low Iq
  • • Low current consumption for power sensitive applications
  • Multiple Outputs
  • • Use as a single reference for your SoC

Block Diagram

IR DROP TSMC Block Diagram

Applications

  • IoT, Security, Automotive, AI, SoCs, ASICs

Deliverables

  • Datasheet
  • Testing and Integration Guide
  • Verilog Models
  • Floorplan (LEF)
  • Timing models (LIB)
  • Netlist (CDL)
  • Layout (GDS)
  • Physical Verification Report
  • Design Report

Technical Specifications

Foundry, Node
TSMC
Maturity
Available on request
Availability
Available
TSMC
Pre-Silicon: 3nm , 4nm , 5nm , 6nm , 7nm , 10nm , 12nm , 16nm , 20nm , 22nm , 28nm , 28nm HP , 28nm HPC , 28nm HPCP , 28nm HPL , 28nm HPM , 28nm LP , 40nm G , 40nm LP , 45nm GS , 45nm LP , 55nm FL , 55nm G , 55nm GP , 55nm LP , 55nm NF , 55nm ULP , 55nm ULPEF , 55nm UP , 65nm G , 65nm GP , 65nm LP , 80nm , 80nm GT , 80nm HS , 85nm , 90nm FS , 90nm FT , 90nm G , 90nm GOD , 90nm GT , 90nm LP , 90nm zzz , 110nm G , 110nm HV , 110nm LVP , 130nm , 130nm BCD , 130nm BCD+ , 130nm G , 130nm LP , 130nm LV , 130nm LVOD , 150nm G , 150nm LV , 160nm G , 160nm LP , 180nm , 180nm E , 180nm ELL , 180nm FG , 180nm G , 180nm LP , 180nm LV , 180nm ULL
×
Semiconductor IP