32.768KHz Low-Power Oscillator IO

Key Features

  • 32.768KHz low-power oscillator IO for RTC application
  • Cell Size (Width * height) 200um * 275um with DUP in-line bonding pads
  • Work voltage: 1.1V~3.3V power
  • ~2uA typical current consumption for low-power RTC application
  • SMIC 40nm Logic Low Leakage 1P10M(1P9M,1P8M,1P7M,1P6M) Salicide 1.1V/1.8V/2.5V Process
  • Suitable for 7, 8 and 9 layers application (single top metal) Suitable for 7, 8, 9 and 10 layers application (double top metal)

Technical Specifications

Foundry, Node
SMIC 40nm
Maturity
Silicon Proven
SMIC
Pre-Silicon: 40nm LL
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Semiconductor IP