32.768KHz Low-Power Oscillator IO
Key Features
- 32.768KHz low-power oscillator IO for RTC application
- Cell Size (Width * height) 200um * 275um with DUP in-line bonding pads
- Work voltage: 1.1V~3.3V power
- ~2uA typical current consumption for low-power RTC application
- SMIC 40nm Logic Low Leakage 1P10M(1P9M,1P8M,1P7M,1P6M) Salicide 1.1V/1.8V/2.5V Process
- Suitable for 7, 8 and 9 layers application (single top metal) Suitable for 7, 8, 9 and 10 layers application (double top metal)
Technical Specifications
Foundry, Node
SMIC 40nm
Maturity
Silicon Proven
SMIC
Pre-Silicon:
40nm
LL