SMIC 110nm G Standard digital,analog and oscillator IO
Key Features
- Standard digital,analog and oscillator IO;
- Cell Size (Width * height) 67um * 131um, 70um*131um(PCI) and 134 um * 131 um (OSC IO) with DUP in-line bonding pads; 80 um * 131um without bonding pads (PVDD1CER);
- Work voltage: 3V/5V input tolerance; 3.3V output
- SMIC 0.13?m Logic Salicide 1.2V/3.3V Process;
- Suitable for 6,7 and 8 layers application;
Technical Specifications
Foundry, Node
SMIC 110nm G
Maturity
Silicon Proven
SMIC
Silicon Proven:
110nm
G
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- SMIC 110nm G IO
- SMIC 110nm G IO