SMIC 110nm G IO

Key Features

  • SMIC 0.13um Logic Salicide 1.2V/3.3V Process(Device Under Pad);
  • 3.3V input/output, or 1.8V input/output.
  • Suitable for 5,6,7 and 8 layers application;
  • 60 um * 106 um with bonding pads;

Technical Specifications

Foundry, Node
SMIC 110nm G
Maturity
Silicon Proven
SMIC
Silicon Proven: 110nm G
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Semiconductor IP