SMIC 110nm G Standard digital,analog and oscillator IO
Key Features
- Standard digital,analog and oscillator IO;
- Cell Size (Width * height) 60um * 170um, 130 um * 170 um (OSC IO), 88 um * 170um with bonding pads (PVDD1CER);
- Work voltage: 1.8V~3.3V power;
- SMIC 0.13?m Logic Salicide 1.2V/3.3V Process;
- Suitable for 6,7 and 8 layers application;
Technical Specifications
Foundry, Node
SMIC 110nm G
Maturity
Silicon Proven
SMIC
Silicon Proven:
110nm
G
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- SMIC 110nm G IO
- SMIC 110nm G IO