High Performance/Low Power/Ultra Low Power Single Port Multi-banks SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, read assist, write assist, supports process HP/
Overview
Memory Compilers
Technical Specifications
Foundry, Node
TSMC 28nm
Maturity
Silicon Proven
TSMC
Silicon Proven:
28nm
Related IPs
- High Performance/Low Power/Ultra Low Power MultiBank Single Port SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, read assist, write assist, supports process HP/HP
- High Density Single Port Multi-banks SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, write assist, supports process FF/P
- High Current Single Port Multi-banks SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, write assist, supports process FF/P
- Ultra Low Leakage/Ultra Low Power Single Port Multi-banks SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, read assist, write assist, supports process ULL/ULP
- Low Power/Ultra Low Power MultiBank Single Port SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, read assist, write assist, supports process G/LP/LP_eDRAM/ULP/ULPE
- High Current Single Port Multi-banks SRAM Compiler with Row/Column Redundancy Option, with Low Leak support, short and long channel, inputs isolation, dual-rails, register scan, write assist, supports process FF/P