GDDR6 PHY for Samsung

Overview

Lowest latency and highest data rates for data-intensive applications

The latest, the Cadence Denali PHY IP for GDDR6, is comprised of architectural improvements drawn from previous-generation DDR PHYs and Cadence’s 10G, 16G, and 25G SerDes, achieving breakthrough performance, low energy per bit, and low area relative to the bandwidth provided. This application-optimized PHY IP can achieve speeds up to 16Gbps across its full-rated range of process, voltage, and temperature, while extensions up to 20Gbps are possible with modifications. The PHY IP for provides a low bit error rate (BER) that can improve bandwidth utilization and maximum latency. The PHY IP is designed to be compatible with standard PCB materials like FR4 up to 16Gbps. The PHY IP is developed by experienced teams with industryleading domain expertise and extensively validated with multiple hardware platforms. It is engineered to quickly and easily integrate into systems on chip (SoCs), and is verified with the Cadence Denali Controller IP for GDDR6 as part of a complete memory subsystem solution.

Key Features

Single configuration supports one GDDR6 device per channel (coplanar) or two GDDR6 devices per channel (clamshell)
Memory controller interface uses DFI 5.0-like standard with extensions for GDDR6
Internal and external datapath loop-back modes
Per-bit DFE, CTLE, and FFE equalization
DFI PHY Independent Mode for initialization and training
Adaptive and continuous timing recovery
Transmit crosstalk cancelation of immediate neighbors
8:1 memory:controller clock ratio for easy controller timing closure

Block Diagram

Applications

Communications,
Consumer Electronics,
Data Processing,
Industrial and Medical,
Military/Civil Aerospace

Deliverables

GDS II macros with abstract in LEF
Verilog post-layout netlist
STA scripts for use at chip or standalone PHY levels
Liberty Timing model
SDF for back-annotated timing verification

Technical Specifications

Foundry, Node

Samsung 7nm, 14nm

Maturity

Available on request

Samsung

Pre-Silicon: 7nm , 14nm

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