DDR2 PHY Command/Address Block ; UMC 0.13um HS/FSG Logic Process
DDR2 PHY Command/Address Block ; UMC 0.13um HS/FSG Logic Process
- Controller + PHY + 1
- DDR2
- UMC
- 130nm
- HS
- In Production
Memory interface IP cores provide the critical connectivity layer between processing elements and memory devices, enabling high-bandwidth, low-latency, and power-efficient data access in modern SoC, ASIC, AI, networking, and high-performance computing designs.
This category includes DDR, LPDDR, GDDR, HBM, NAND Flash, and NOR Flash interface IP solutions, covering memory controllers, PHYs, controller-PHY subsystems, training engines, calibration logic, and complete memory interface architectures. These IP cores are designed to maximize memory bandwidth, optimize latency, ensure signal integrity, and simplify integration across advanced semiconductor process nodes.
DDR2 PHY Command/Address Block ; UMC 0.13um HS/FSG Logic Process
DDR2 PHY Command/Address Block ; UMC 0.13um HS/FSG Logic Process
Data block of 1:2 DDR2-PHY ; UMC 0.11um HS/AE (AL Advanced Enhancement) Logic Process
Data block of 1:2 DDR2-PHY ; UMC 0.11um HS/AE (AL Enhancement) Logic Process
DDR2/DDR1/MDDR Combo Data Block ; UMC 65nm LP/RVT LowK Logic Process
DDR2/DDR1/MDDR Combo Data Block ; UMC 65nm LP/RVT LowK Logic Process
DDR2/MDDR Combo Data Block ; 0.13um Logic HS/FSG Logic Process
DDR2/MDDR Combo Data Block ; 0.13um Logic HS/FSG Logic Process
DDR2/MDDR Combo PHY data block ; UMC 55nm SP process with 2.5V device
DDR2/MDDR Combo PHY data block ; UMC 55nm SP process with 2.5V device
DDR2/MDDR PHY Data block ; UMC 65nm 1.0V with 2.5V device SP/RVT LowK Logic Process
DDR2/MDDR PHY Data block ; UMC 65nm 1.0V with 2.5V device SP/RVT LowK Logic Process
DDR2/MDDR COMBO PHY Data block for Chip usage ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR2/MDDR COMBO PHY Data block for Chip usage ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR2/MDDR Combo PHY for Chip load usage ; UMC 65NM SP-RVT with 2.5V device LowK Logic Process
DDR2/MDDR Combo PHY for Chip load usage ; UMC 65NM SP-RVT with 2.5V device LowK Logic Process
DDR2-PHY compensation block, BOAC; UMC 90nm SP/RVT Low-K Logic process
DDR2-PHY compensation block, BOAC; UMC 90nm SP/RVT Low-K Logic process
DDR2-PHY compensation block, BOAC; UMC 0.13um HS/FSG process
DDR2-PHY compensation block, BOAC; UMC 0.13um HS/FSG process
DDR2 PHY compensation block for 171 series (non BOAC); UMC 0.13um HS/FSG Logic Process
DDR2 PHY compensation block for 171 series (non BOAC); UMC 0.13um HS/FSG Logic Process
DDR2 PHY Compensation block; UMC 55nm SP/RVT LowK Logic Process
DDR2 PHY Compensation block; UMC 55nm SP/RVT LowK Logic Process
DDR2 PHY compensation block; UMC 65nm SP/RVT LowK Logic Process
DDR2 PHY compensation block; UMC 65nm SP/RVT LowK Logic Process
Command/address block of 1:2 DDR2-PHY ; 0.11um HS/AE (AL Advanced Enhancement) Logic Process
Command/address block of 1:2 DDR2-PHY ; 0.11um HS/AE (AL Enhancement) Logic Process
DDR2/DDR1/MDDR Combo Command/Address Block ; UMC 65nm LP/RVT LowK Logic Process
DDR2/DDR1/MDDR Combo Command/Address Block ; UMC 65nm LP/RVT LowK Logic Process
DDR2/MDDR Combo Command/Address Block ; UMC 0.13um HS/FSG Logic Process
DDR2/MDDR Combo Command/Address Block ; UMC 0.13um HS/FSG Logic Process
DDR2/MDDR PHY CMD/ADDR BLOCK for DIMM usage; UMC 55nm 1.0V with 2.5V device SP/RVT LowK Logic Process
DDR2/MDDR PHY CMD/ADDR BLOCK for DIMM usage ; UMC 65nm 1.0V with 2.5V Device SP/RVT LowK Logic Process
DDR2/MDDR Combo PHY CMD ADDR block ; UMC 55nm SP/RVT Lowk Process with 2.5V device
DDR2/MDDR Combo PHY CMD ADDR block ; UMC 55nm SP/RVT Lowk Process with 2.5V device
DDR2/MDDR PHY CMD/ADDR BLOCK ; UMC 65nm 1.0V process with 2.5V device SP/RVT Lowk Logic Process
DDR2/MDDR PHY CMD/ADDR BLOCK ; UMC 65nm 1.0V process with 2.5V device SP/RVT Lowk Logic Process