40nm LPDDR2-PHY command/address block for SIP
40nm LPDDR2-PHY command/address block for SIP
- Controller + PHY + 1
- UMC
- 40nm
- LP
Memory interface IP cores provide the critical connectivity layer between processing elements and memory devices, enabling high-bandwidth, low-latency, and power-efficient data access in modern SoC, ASIC, AI, networking, and high-performance computing designs.
This category includes DDR, LPDDR, GDDR, HBM, NAND Flash, and NOR Flash interface IP solutions, covering memory controllers, PHYs, controller-PHY subsystems, training engines, calibration logic, and complete memory interface architectures. These IP cores are designed to maximize memory bandwidth, optimize latency, ensure signal integrity, and simplify integration across advanced semiconductor process nodes.
40nm LPDDR2-PHY command/address block for SIP
40nm LPDDR2-PHY command/address block for SIP
40nm LP DDR3/4 LPDDR23 COMBO PHY DATA Block for Flip Chip usage
40nm LP DDR3/4 LPDDR23 COMBO PHY DATA Block for Flip Chip usage
UMC 40nm LP process DDR34/LPDDR23 COMPENSATION Block with 2.5V Device
UMC 40nm LP process DDR34/LPDDR23 COMPENSATION Block with 2.5V Device
DDR34 COMBO PHY ADDR Block for Solder bump Flip chip version ;UMC 40nm LP/RVT Logic Process
DDR34 COMBO PHY ADDR Block for Solder bump Flip chip version ;UMC 40nm LP/RVT Logic Process
DDR3/DDR3L/LPDDR2 combo PHY ( not support DDR3 leveling function), data block;UMC 40nm LP/RVT LowK Logic Process .
DDR3/DDR3L/LPDDR2 combo PHY ( not support DDR3 leveling function), command / address block,UMC 40nm LP/RVT LowK Logic Process.
DDR3 Combo PHY Data Block for solder bump application; UMC 40nm LP/RVT Logic Process
DDR3 Combo PHY Data Block for solder bump application; UMC 40nm LP/RVT Logic Process
Data Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY for Chip Application (compliant to DFI); UMC 55nm SP/RVT LowK Logic Process
UMC 55NM SP-RVT with 2.5V device process 16BIT DDR23 COMBO DATA PHY for two layer PCB board usage
UMC 55NM SP-RVT with 2.5V device process 16BIT DDR23 COMBO DATA PHY for two layer PCB board usage
DDR3 Combo PHY Compensation Block for solder bump application; UMC 40nm LP/RVT Logic Process
DDR3 Combo PHY Compensation Block for solder bump application; UMC 40nm LP/RVT Logic Process
Compensation Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY for SIP Application; UMC 28nm HPC/RVT LowK Logic Process
DDR3 Combo PHY COMM/ADDR Block for 2-rank and solder bump application; UMC 40nm LP/RVT Logic Process
DDR3 Combo PHY COMM/ADDR Block for 2-rank and solder bump application; UMC 40nm LP/RVT Logic Process
DDR3 Combo PHY COMM/ADDR Block for 2-rank and solder bump application; UMC 40nm LP/RVT Logic Process
DDR3 Combo PHY COMM/ADDR Block for 2-rank and solder bump application; UMC 40nm LP/RVT Logic Process
Command/Address Block of DDR3/DDR3L/DDR2/LPDDR2/LPDDR Combo PHY for Chip Application (compliant to DFI); UMC 55nm SP/RVT LowK Log…
UMC 55NM SP-RVT with 2.5V device DDR23 COMBO PHY CMD/ADDR Block for 2 layer PCB board usage
UMC 55NM SP-RVT with 2.5V device DDR23 COMBO PHY CMD/ADDR Block for 2 layer PCB board usage
1:2 DDR2/DDR1/MDDR combo PHY; UMC 0.11um HS/Cu Logic Process
1:2 DDR2/DDR1/MDDR combo PHY; UMC 0.11um HS/Cu Logic Process
DDRII Data Block for Chip Application; UMC 0.11um HS/AE (AL Advance Enhancement) Logic Process
DDRII Data Block for Chip Application; UMC 0.11um HS/AE (AL Advance Enhancement) Logic Process
1:2 DDR2/DDR1/MDDR combo PHY; UMC 0.11um HS/Cu Logic Process
1:2 DDR2/DDR1/MDDR combo PHY; UMC 0.11um HS/Cu Logic Process
DDR1/MDDR PHY Data block ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR1/MDDR PHY Data block ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR1/MDDR PHY CMD/ADDR BLOCK ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process
DDR1/MDDR PHY CMD/ADDR BLOCK ; UMC 55nm SP/RVT with 2.5V device LowK Logic Process