This TSMC 3nm 3.3V ESD Local Clamp provides compact, low-capacitance on-chip ESD protection for sensitive I/O and interface pins.
- TSMC
- 3nm
- N3A
- Available on request
Foundation Library IP cores provide the fundamental building blocks required for ASIC and SoC implementation, enabling efficient digital design, physical synthesis, timing closure, and manufacturing across advanced semiconductor process nodes.
This category includes both Standard Cell Libraries and I/O Pad Libraries, covering logic cells, sequential elements, low-power cells, level shifters, ESD-protected I/O interfaces, and process-specific implementation libraries optimized for leading foundries.
This catalog enables semiconductor engineers to evaluate and compare Foundation Library IP solutions from multiple vendors based on process node support, PPA (Power, Performance, Area) characteristics, library characterization quality, voltage domains, reliability requirements, and integration with modern EDA design flows.
Whether targeting AI accelerators, automotive SoCs, networking devices, wireless chipsets, or high-performance computing applications, engineers can identify the Foundation Library IP best suited to their technology, performance, and manufacturing requirements.
This TSMC 3nm 3.3V ESD Local Clamp provides compact, low-capacitance on-chip ESD protection for sensitive I/O and interface pins.
TSMC 3nm 1V2 ESD Local Clamp – Low Capacitance
This TSMC 3nm 1.2V ESD Local Clamp provides low-capacitance, low-leakage on-chip ESD protection for sensitive I/O and high-speed interface pins.
TSMC 22nm 5V5 ESD Power Clamp – Low Leakage
This TSMC 22nm 5.5V ESD Power Clamp provides low-leakage protection for sensitive supply and interface pins.
This specific IP macro is designed in TSMC 12nm and can be ported to other technologies upon request using Sofics in-house design tool flow.
This TSMC 12nm 2.5V ESD Power Clamp IP macro provides compact, low-leakage ESD protection for FinFET designs.
This specific IP macro is designed in TSMC 12nm and can be ported to other technologies upon request using Sofics in-house design tool flow.
TSMC 12nm 0V8 ESD Local Protection Low Cap
This TSMC 12nm 0.8V ESD Local Protection IP provides low-capacitance, low-leakage protection for sensitive I/O and interface pins.
SMIC 28nm 0V75 ESD Power Clamp
This specific IP macro is designed in 28nm and can be ported to other technologies upon request using Sofics in-house design tool flow.
SMIC 28nm 0V75 ESD Local Clamp – Low Capacitance
This specific IP macro is designed in 28nm and can be ported to other technologies upon request using Sofics in-house design tool flow.
This TSMC 3nm 3.3V GPIO IP provides configurable, overvoltage-tolerant I/O functionality for advanced-node designs.
This specific IP macro is designed in TSMC 22nm and can be ported to other technologies upon request using Sofics in-house design tool flow.
The TSMC 2nm 1.2V GPIO offers configurable I/O functionality with multi-voltage support, over-voltage tolerance (OVT), and high-speed or ultra-low-power modes.
SMC 2nm 1V8 ESD Power Clamp – Low Leakage
Silicon-proven ESD protection for GAA/nanosheet technologies
TSMC 2nm 1V8 ESD Local Clamp – Low Leakage
Silicon-proven ESD protection for GAA/nanosheet technologies
Sofics specialty I/Os offer configurable GPIOs with multi-voltage support, over-voltage tolerance (OVT), and high-speed or ultra-low-power modes.
High speed MACsec Engine 100G/200G/400G/800G/1.6T
IEEE 802.1AE-2018 Line-Rate Ethernet Layer 2 Security IP Core
Analog I/O Library with a custom 12V ESD Solution IN GF 55nm
An Analog I/O Library in GlobalFoundries 55nm LPx-BCDlite technology This I/O library is a silicon-proven, flip-chip-optimized an…
Standard Cell Library in SkyWater 90nm
A low-leakage digital standard cell library for energy-efficient, long-lifecycle SoC designs in SkyWater 90nm CMOS.
1 Gb/s LVDS Bidirectional IO on 12nm
The ODT-LVDS-BID1G-12nm is a high-speed Bidirectional LVDS IO cell capable of operating up to 1 Gb/s.
Standard Cell Libraries GF 55nm
The Standard Cell libraries deliver thousands of optimized cells with each one being optimized for power, area, speed, routing, a…