Vendor: Sofics Category: ESD Protection

TSMC 5nm 1V8, 1.2V and 0.9V ESD Local Protection – Low Cap

This TSMC 3nm 1.8V, 1.2V and 0.9V ESD Local Protection IP provides low-capacitance, low-leakage protection for sensitive I/O and interface pins.

TSMC 5nm N5 Available on request View all specifications

Overview

This TSMC 3nm 1.8V, 1.2V and 0.9V ESD Local Protection IP provides low-capacitance, low-leakage protection for sensitive I/O and interface pins. It is designed in TSMC 3nm and can be ported to other technologies upon request using Sofics in-house design tool flow.

The TSMC 3nm 0.8V ESD Local Protection provides robust on-chip protection for sensitive I/O and interface pins while minimizing impact on signal performance, leakage, and silicon area. The solution can be adapted to specific interface requirements, voltage domains, ESD robustness targets, and foundry design rules.

The low-capacitance ESD protection concept supports reliable operation under HBM and CDM stress conditions and can be customized for higher robustness levels, low-capacitance interfaces, low-leakage applications, or reduced area.

Details

Parameter Value
VDD 1.8V ±10%
VDDIO VDD ±0.3
Temperature Tj -40C to 125C

Key Features

Parameter Value
TLP 200mA
HBM 300V
Leakage <100nA
Capacitance <13.20fF

Area

Type Size [μm²]
IO 113.24

Key features

  • Local protection for I/O / analog / RF / high-voltage pins
  • Supports HBM and CDM robustness targets
  • Low-capacitance implementation
  • Low-leakage options available
  • Compact ESD clamp layout
  • Compatible with foundry or custom pad ring integration

Block Diagram

Benefits

  • Silicon-proven ESD protection for FinFET technologies
  • High robustness against HBM, CDM, latch-up and system-level stress conditions
  • Low parasitic capacitance
  • Compact layout footprint compared to conventional foundry ESD solutions
  • Customizable trigger, holding voltage, leakage and clamp configuration
  • Modular design enables fast and reliable turnaround and low NRE

Silicon Options

Foundry Node Process Maturity
TSMC 5nm N5 Available on request

Specifications

Identity

Part Number
DS-TS3N-1V8-1V2-0v9-LC-LWC01-ESD
Vendor
Sofics
Type
Silicon IP

Files

Note: some files may require an NDA depending on provider policy.

Provider

HQ: Belgium

Learn more about ESD Protection IP core

EOS protection characterization using Long-Pulse TLP

EOS, or Electrical Overstress, is a significant factor in IC reliability. Sometimes, IC interfaces and/or power pads are subjected to voltage/current levels beyond the absolute maximum rating. Sources claim that more than 40% of the field failures in electronic products are related to EOS.

Frequently asked questions about ESD Protection Library IP cores

What is TSMC 5nm 1V8, 1.2V and 0.9V ESD Local Protection – Low Cap?

TSMC 5nm 1V8, 1.2V and 0.9V ESD Local Protection – Low Cap is a ESD Protection IP core from Sofics listed on Semi IP Hub. It is listed with support for tsmc Available on request.

How should engineers evaluate this ESD Protection?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this ESD Protection IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

×
Semiconductor IP