Intel confirms 450-mm fab plans
Mark LaPedus, EETimes
12/8/2010 3:13 PM EST
SAN FRANCISCO - Amid a flurry of speculation, Intel Corp. confirmed that its new fab in the United States is being constructed for the 450-mm wafer era. As reported, Intel will build a new R&D wafer fab in Hillsboro, Ore., and upgrade other existing U.S. facilities for 22-nm production at a total investment of between $6 billion and $8 billion.
To read the full article, click here
Related Semiconductor IP
- Dual Channel 8b D/A Converter - TSMC T40ULP
- Dual Channel 12b D/A Converter - TSMC T40ULP+ESF3
- 8bit D/A Converter - TSMC 22nm ULP
- 12bit 2MSps A/D Converter - TSMC T22ULP
- TSMC 2nm 1V2 GPIO
Related News
- Intel considers foundry split, fab cancellations
- Intel to Repurchase 49% Equity Interest in Ireland Fab Joint Venture
- Commentary: Get ready for 450-mm fabs
- Intel, Samsung Electronics and TSMC Reach Agreement for 450mm Wafer Manufacturing Transition
Latest News
- Brite Semiconductor Releases 28nm High-Performance SAR ADC IP, Driving Upgrades for High-Speed Signal Chain Applications
- Synopsys Updates CXL IP Portfolio for AI-Era Infrastructure
- BrainChip Launches Symphony Community Akida Bundle For IBM’s Workload Management Solution
- StarIC Appoints Dr. Masum Hossain as Chief Technology Officer
- Andes Technology Empowers RISC-V Developers with Its New Streamlined IDE, RVBuilder