Intel confirms 450-mm fab plans
Mark LaPedus, EETimes
12/8/2010 3:13 PM EST
SAN FRANCISCO - Amid a flurry of speculation, Intel Corp. confirmed that its new fab in the United States is being constructed for the 450-mm wafer era. As reported, Intel will build a new R&D wafer fab in Hillsboro, Ore., and upgrade other existing U.S. facilities for 22-nm production at a total investment of between $6 billion and $8 billion.
To read the full article, click here
Related Semiconductor IP
- NPU IP
- JPEG XL Encoder
- I2C Master/Slave Controller Core
- NVMe Validation Test Suite
- Hybrid Memory Cube Verification IP
Related News
- Intel considers foundry split, fab cancellations
- Intel to Repurchase 49% Equity Interest in Ireland Fab Joint Venture
- Commentary: Get ready for 450-mm fabs
- Intel, Samsung Electronics and TSMC Reach Agreement for 450mm Wafer Manufacturing Transition
Latest News
- GF unveils roadmap to deliver the world’s most advanced FD-SOI platform for Physical AI
- GlobalFoundries marks Dresden expansion milestone, announces next-generation platform for Physical AI
- TSMC September 2026 Revenue Report
- Lattice Collaborates with Arm to Advance Secure, Adaptable AI Data Center Infrastructure
- ZLG Selects CAST CAN XL and TSN IP for Next-Generation Vehicle-Network Development and Test Tools