Samsung: Ready for big foundry push
Mark LaPedus, EETimes
11/9/2010 6:37 PM EST
SANTA CLARA, Calif. – At the ARM Technology Conference here, Samsung Electronics Co. Ltd. sent a message to the foundry industry: It’s ready for a big push in 32-nm production with high-k.
In June, South Korea's Samsung said its foundry business qualified a 32-nm low-power process with a high-k/metal-gate technology. The company lays claim to being the first foundry to ''qualify'' a high-k/metal-gate technology.
To read the full article, click here
Related Semiconductor IP
- Verification IP for C-PHY
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
Related News
- Samsung Announces Availability of Its Leading-Edge 2.5D Integration 'H-Cube' Solution for High Performance Applications
- Synopsys and Samsung Collaborate to Deliver Broad IP Portfolio Across All Advanced Samsung Foundry Processes
- Cadence and Samsung Foundry Enter Multi-Year Agreement to Expand Design IP Portfolio
- Synopsys and Samsung Foundry Boost Power, Performance and Area for Modern SoCs on Samsung's SF2 Process
Latest News
- UMC Reports First Quarter 2026 Results
- Rambus Appoints Sumeet Gagneja as Chief Financial Officer
- SEMI Reports Worldwide Silicon Wafer Shipments Increase 13% Year-on-Year in Q1 2026
- POLYN Technology Announces Tapeout of Automotive Chip
- QuickLogic Establishes New Banking Relationship and Secures $10 Million Revolving Credit Facility