Samsung Ramps 10nm in 2016
FinFET Roadmap Aligns with TSMC's Plans
5/22/2015 01:50 AM EDT
SAN FRANCISCO -- Samsung announced its next-generation process technology, a 10nm FinFET node, at a company event here. The announcement comes a month after Samsung detailed its 14nm process.
Samsung was shy on specs, but said the process node will be in full production by the end of 2016, about the same time as its rival TSMC. The Samsung 10nm process offers “significant power, area, and performance advantages” and targets a broad range of markets, said foundry senior vice president Hong Hao.
To read the full article, click here
Related Semiconductor IP
- Camera Post-Processing IP
- DC-DC Split-Pi Boost-Buck Converter
- Deep learning accelerator
- MIL-STD-1553 Controller IP
- UFS 5.x Device IP
Related News
- Intel: 450-mm wafers must wait on 10-nm
- Quad patterning a possibility at 10nm, says TSMC
- UMC joins IBM chip alliance for 10nm process development
- Common Platform in Preparation for SOI, FinFETs at 10nm
Latest News
- VeriSilicon Introduces CPP2000 Camera Post-Processing IP for Embodied Robotics and Mobile Vision Applications
- Infineon opens the world's largest fab for power semiconductors and analog/mixed-signal technologies in Dresden
- Tenstorrent Sets New Performance Records, Launches TT- Ascalon S, and Expands Across Japan
- Chips&Media Signs APV codec IP Licensing Deal with North American Big Tech, Establishing the ‘Second Front’ Against Apple’s ProRes
- Chipsolve Technologies Appoints Balaji Kanigicherla as Chairman of the Board