Intel: 450-mm wafers must wait on 10-nm
Peter Clarke, EETimes
2/28/2011 3:39 PM EST
GRENOBLE, France – The 10-nm process node appears to be the ideal point for the adoption of manufacturing on 450-mm diameter wafers, according Leonard Hobbs, head of research for Intel Ireland. Speaking at the Industry Strategy Symposium here (ISS Europe) he also indicated that the transition could not come sooner and could be pushed later, depending on the efficacy of industry collaboration.
Hobbs portrayed the transition taking place 2015 to 2017.
To read the full article, click here
Related Semiconductor IP
- Ultra Ethernet MAC & PCS 100G/200G/400G/800G
- Ethernet PCS 100G/200G/400G/800G/1.6T
- Ethernet MAC 100G/200G/400G/800G/1.6T
- Junction Over-Temperature Detector with Linear Centigrade-to-Voltage Output - X-FAB XT018
- Performance P570 Gen 3
Related News
- SJSemi and Qualcomm Jointly Announce Qualification of 10nm Ultra-high Density Wafer Bumping Technology
- Commentary: Get ready for 450-mm fabs
- Intel, Samsung Electronics and TSMC Reach Agreement for 450mm Wafer Manufacturing Transition
- UMC tips roadmap, questions 450-mm
Latest News
- SkyeChip Berhad Delivers 35.0% Net Profit Growth Ahead of Main Market Debut on 20 May 2026
- Quantum eMotion and JMEM TEK Sign Consortium Agreement to Accelerate Quantum-Resilient Semiconductor SoC Development
- Silvaco Announces Immediate Availability of Mixel MIPI C-PHY/D-PHY Combo IP on TSMC N2P Process
- BrainChip Strikes IP Licensing Deal with ASICLAND
- Arteris Technology Adopted by Li Auto for Intelligent Vehicles