Matsushita, Tower deploying 0.18-micron embedded flash
(10/06/2004 9:01 PM EDT)
SAN JOSE, Calif. — Japan's Matsushita Electric Industrial Co. and Isreal's Tower Semiconductor Ltd. have put the finishing touches on a co-development deal in the embedded flash-memory market, according to sources at the FSA Expo here.
Matsushita and Tower co-developed a 0.18-micron embedded flash process, based on technology from Saifun Semiconductor Ltd., sources said. Saifun is the developer of NROM technology, which stores two bits within one memory cell with memory sites at each end of floating gate.
Initially, Matsushita and Tower devised the 0.18-micron embedded flash process within Matsushita's fabs in Japan, sources said. Tower is bringing the process up for foundry purposes within its own Fab 2 plant, an 8-inch facility in Isreal, they added.
Tower also offers a 0.5-micron embedded flash process, based on technology from Saifun.
Related Semiconductor IP
- 100M/1G/ TSN Endpoint DO-254 IP Core
- Image Signal Processor
- H.265 / HEVC Video Codec
- H.264 / AVC Video Encoder
- Crest Factor Reduction
Related News
- Floadia Releases Automotive Embedded Flash IP on TSMC 180BCD Gen3 Platform
- Trebia Networks Successfully Performs LogicVision's At-Speed Debug on .18 Micron Prototype Storage Networking Chip
- TowerJazz Expected to Nearly Double Production Capacity with Proposed Acquisition of Micron Technology Wafer Manufacturing Plant in Japan
- Micron and Intel Unveil New 3D NAND Flash Memory
Latest News
- INTERA Launches EAGLE Cognit, Bringing Ultra-Low-Power Near-Memory AI Acceleration to Next-Generation Edge Devices
- AeroTSN-EP in Action: SOC-E Brings Live Aerospace TSN Demonstration to A&D TSN Summit 2026
- Agnisys and Axiomise Collaborate to Accelerate NoC Design and Formal Sign-off
- TSMC Reports Third Quarter EPS of NT$29.43
- ChipAgents Collaborates With NVIDIA to Launch Build-A-Chip-Bench for Autonomous Chip Design and Implementation