Did Intel Fall For A Techno-Ponzi Scheme?
September 15, 2016
Did Intel management fall for that decades old Techno-Ponzi scheme – phase change memory.
A hilarious piece in Semiaccurate points out that on launch in July 2015 the claim for 3D XPoint was: 1000x faster than NAND, 1000x the endurance of NAND, and 10x denser than DRAM.
To read the full article, click here
Related Semiconductor IP
- Over-Voltage Lockout (OVLO) IP
- Verification IP for Universal Chiplet Interconnect Express (UCIe) up to 3.0
- UCIe-S (Gen2) Compatible PHY for Standard Package (x16) in TSMC N3P, North/South Orientation
- DSP-Based 112G SerDes
- XTAL oscillator in TSMC-7nm
Related Blogs
- When Memory Shortages Change Architecture Decisions
- Why Intel 14nm is NOT a Game Changer!
- Xilinx unleashes triad of low-power, 28nm FPGA families with very promising characteristics for memory interfacing
- Anti-Fuse Memory With Gusto
Latest Blogs
- M31 High-Speed and Long-Channel MIPI C/D-PHY Solution on TSMC N3P/N3C
- Understanding security certification and how analog IP can help
- Embedded Security explained: Secure boot for embedded systems
- World's First Standards-Compliant 112G PHY IP for Linear Optics: A Turning Point for AI Interconnects
- One Key for Every Door: How Aliro Extends the UWB Digital Key Beyond the Car