Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation
Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation
Vendor:
TES Electronic Solutions
Category:
Amplifier
54 - 67 GHz Low Noise Amplifier
SiGe:C HBT MMIC
Overview
The TS-LNA-60 is a Low Noise Amplifier intended for use in 60 GHz applications. Power consumption of only 60 mW is suitable for use in battery operated devices. External component count is significantly reduced by internal 100 Ohm matching, AC coupling and by eliminating the need for negative bias voltages.
Electrical specifications, TA=25 °C, 50 Ohm system, Measured with 1:2 Balun, VCC=2.7V
| Parameter | Min | Typ. | Max | Units |
| Frequency range (1 dB Bandwidth) | 57 – 67 | GHz | ||
| Input Return Loss | -12 | dB | ||
| Output Return Loss | -8 | dB | ||
| Gain | 24.5 | dB | ||
| Noise Figure | 5.3 | 5.9 | dB | |
| Output Power for 1 dB Compression | -1 | dBm | ||
| Supply current | 22 | mA | ||
Key features
- Gain: 24.5 dB
- Differential Inputs/Outputs Bandwidth (1 dB): 57 – 67 GHz
- Noise Figure: 5.5 dB
- Internally Matched to 100 Ohm
- Supply voltage: +2.7 V
- Die Size: 0.954 x 0.954 mm2
Block Diagram
Click to open fullscreen
Applications
Low Noise Amplifier 54 - 67 GHz for use in:
- Short Range High Capacity Links,
- Mobile Terminals,
- Battery Operated Devices.
Specifications
Identity
Part Number
TS-LNA-60
Vendor
TES Electronic Solutions
Type
Silicon IP
Files
Note: some files may require an NDA depending on provider policy.
Provider
HQ:
Germany
Learn more about Amplifier IP core
Designing the Beam Steering Core for a C-Band AESA: A Look at VSI's VBF0644 GaAs Beamformer IC
Among the four building blocks of an AESA T/R module — power amplifier, low-noise amplifier, T/R switch, and beamformer IC — the beamformer is the one that most directly determines system-level radar performance.
Powering the Future of RF: Falcomm and GlobalFoundries at IMS 2025
GF’s comprehensive RF portfolio, including our industry-leading RFSOI, SiGe, 22FDX+ and RF GaN platforms, is purpose-built to push the boundaries of what’s possible in connectivity, but we’re not doing it alone. Together with innovative partners like Falcomm, we’re moving the industry forward, providing our customers with cutting-edge solutions to enhance performance, power and integration and create connected technologies with higher signal quality, better efficiency and longer battery life.
Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection
Integrated circuits are susceptible to electrostatic discharge (ESD) events. Real-time detection and alerting of ESD events in semiconductor manufacturing environments is the key to achieving well ESD control. Additionally, the magnitude and duration of an ESD event are strongly correlated with the specific type of ESD events.
Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures
Linearity Analysis of Source-Degenerated Differential Pairs for Wireline Applications
This paper presents a comprehensive analysis of nonlinearities in differential pairs with source degeneration and their impact on wireline communication applications.
Frequently asked questions about Amplifier IP cores
What is 54 - 67 GHz Low Noise Amplifier?
54 - 67 GHz Low Noise Amplifier is a Amplifier IP core from TES Electronic Solutions listed on Semi IP Hub.
How should engineers evaluate this Amplifier?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.