Low-Offset Programmable Gain Amplifier on UMC 55nm

Amplifier linearization promotes efficiency in multi-carrier WCDMA basestation

Conventional MRAM read circuits face two fundamental challenges: high dynamic energy consumption and vulnerability to side-channel attacks caused by data-dependent current variations in Magnetic Tunnel Junctions (MTJs). This paper presents a Secured Adiabatic Logic Sense Amplifier (SALSA) that addresses both challenges simultaneously through circuit-device co-design.

Mixed-signal SoCs rely on nominally input-only analog pins to acquire off-chip signals, but the directionality of these interfaces is generally treated as a functional property rather than explicitly verified as a security property. This work identifies and experimentally demonstrates a directionality-based class of analog and mixed-signal (AMS) exfiltration attacks in which data-dependent circuit-offset modulation converts a nominally input-only pin into an outbound information channel.

Among the four building blocks of an AESA T/R module — power amplifier, low-noise amplifier, T/R switch, and beamformer IC — the beamformer is the one that most directly determines system-level radar performance.

GF’s comprehensive RF portfolio, including our industry-leading RFSOI, SiGe, 22FDX+ and RF GaN platforms, is purpose-built to push the boundaries of what’s possible in connectivity, but we’re not doing it alone. Together with innovative partners like Falcomm, we’re moving the industry forward, providing our customers with cutting-edge solutions to enhance performance, power and integration and create connected technologies with higher signal quality, better efficiency and longer battery life.

Integrated circuits are susceptible to electrostatic discharge (ESD) events. Real-time detection and alerting of ESD events in semiconductor manufacturing environments is the key to achieving well ESD control. Additionally, the magnitude and duration of an ESD event are strongly correlated with the specific type of ESD events.