IDM model gets bad rap, says 'fab club' exec
Mark LaPedus, EE Times
(05/04/2006 7:04 PM EDT)
CUPERTINO, Calif. — Integrated device manufacturers (IDMs) are getting a bad rap in the market, especially from short-sighted Wall Street analysts who lack a thorough understanding of the concept of wafer fabs, according to the executive from the “fab club.”
The concept of building and owning a wafer fab for many IDMs these days has taken on a "negative connotation" in the market, said L.T. Guttadauro, executive director of the Fab Owners Association (FOA, Cuperino, Calif.), a group that represents IDMs.
"I’m concerned," Guttadauro said. “The fab model has taken a beating. Fabs are a valued and strategic part of a company."
Intel, Samsung, TI and a handful of other leading-edge IDMs have been able to justify their massive fab investments in the market. Fabs are also critical for small- to mid-size IDMs, many of which develop specialized processes that are difficult to outsource, according to the FOA executive.
(05/04/2006 7:04 PM EDT)
CUPERTINO, Calif. — Integrated device manufacturers (IDMs) are getting a bad rap in the market, especially from short-sighted Wall Street analysts who lack a thorough understanding of the concept of wafer fabs, according to the executive from the “fab club.”
The concept of building and owning a wafer fab for many IDMs these days has taken on a "negative connotation" in the market, said L.T. Guttadauro, executive director of the Fab Owners Association (FOA, Cuperino, Calif.), a group that represents IDMs.
"I’m concerned," Guttadauro said. “The fab model has taken a beating. Fabs are a valued and strategic part of a company."
Intel, Samsung, TI and a handful of other leading-edge IDMs have been able to justify their massive fab investments in the market. Fabs are also critical for small- to mid-size IDMs, many of which develop specialized processes that are difficult to outsource, according to the FOA executive.
To read the full article, click here
Related Semiconductor IP
- Verification IP for C-PHY
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
Related News
- ARM exec gives hints for IP business model optimization
- Intel exec says fabless model "collapsing"
- Exec tried to set up copy-cat Samsung fab in China
- Korean prosecutors name ex-Samsung exec who tried to set up copy-cat fab in China and the Taiwanese backer
Latest News
- JEDEC Advances DDR5 MRDIMM Ecosystem with New Memory Interface Logic and Expanded MRDIMM Roadmap
- Altera Brings Determinism to Physical AI Systems with Latest Release of FPGA AI Suite
- Mosaic SoC raises $3.8M to bring real-time spatial intelligence to every consumer device
- UMC Reports First Quarter 2026 Results
- Rambus Appoints Sumeet Gagneja as Chief Financial Officer