How to Reduce Memory Model Debug Time
September 27, 2019
Looking for ways to reduce debug cycles to quickly root cause the issues in your Memory Controller/PHY and Subsystem Verification Project?
At some point, you have most likely faced one of the following challenges while debugging a memory model (Timing Issues, Log Messages, Bank Stats, Layered Debug, etc..)
Synopsys Memory Model (VIP), together with Verdi increases your overall debugging productivity. Below are examples of how the tightly coupled debug solution will help to address some of the pain points:
To read the full article, click here
Related Semiconductor IP
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
Related Blogs
- Reduce Protocol Debug Time with Memory VIP
- Simplifying Debug of Memory Models
- Buying DDRn Controller IP AND Memory Model to the same IP vendor gives real TTM advantage
- Accelerating Memory Debug
Latest Blogs
- AI in Design Verification: Where It Works and Where It Doesn’t
- PCIe 7.0 fundamentals: Baseline ordering rules
- Ensuring reliability in Advanced IC design
- A Closer Look at proteanTecs Health and Performance Management Solutions Portfolio
- Enabling Memory Choice for Modern AI Systems: Tenstorrent and Rambus Deliver Flexible, Power-Efficient Solutions