ARM Fancies FD-SOI
July 29, 2013
ARM is enthusiastic about the potential of FD-SOI – STMicroelectronics’ process which is getting massive backing from the French government.
“We have been looking at FD-SOI, it’s a very neat solution to providing more performance and lower power in a planar transistor,” Simon Segars, CEO of ARM, told EW.
“I’ve seen some of the results ST have achieved and they’re really impressive,” added Segars, “and I’ve seen chips running on the bench and, from the performance and power perspective, it’s very impressive.”
To read the full article, click here
Related Semiconductor IP
- TSMC 7nm 0V75 / 0V9 ESD Local Clamp – Low Cap
- TSMC 65nm 3V3 ESD Local Clamp – Rad Hard
- TSMC 5nm 1V8, 1.2V and 0.9V ESD Local Protection – Low Cap
- TSMC 3nm 3V3 ESD Local Clamp
- TSMC 3nm 1V2 ESD Local Clamp – Low Capacitance
Related Blogs
- ST To Run 28nm FD-SOI NovaThor Next Week
- Can "Less than Moore" FDSOI provides better ROI for Mobile IC?
- FD-SOI Can Deliver Leading-Edge European IC Process Technology
- UTBB FDSOI Devices Featuring 20nm Gate Length