FDSOI
FDSOI (Fully Depleted Silicon-On-Insulator) is a semiconductor fabrication technology where a thin silicon layer is placed on top of an insulating layer (buried oxide). This structure allows the transistor channel to be fully depleted, enabling better control over short-channel effects, lower leakage current, and higher switching speed compared to conventional bulk CMOS.
Key characteristics of FDSOI:
- Thin silicon layer fully depletes carriers
- Buried oxide isolates the active silicon layer from the substrate
- Enables body-biasing techniques to dynamically adjust transistor performance
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