FDSOI
FDSOI (Fully Depleted Silicon-On-Insulator) is a semiconductor fabrication technology where a thin silicon layer is placed on top of an insulating layer (buried oxide). This structure allows the transistor channel to be fully depleted, enabling better control over short-channel effects, lower leakage current, and higher switching speed compared to conventional bulk CMOS.
Key characteristics of FDSOI:
- Thin silicon layer fully depletes carriers
- Buried oxide isolates the active silicon layer from the substrate
- Enables body-biasing techniques to dynamically adjust transistor performance
Related Articles
- FD-SOI: A Cyber-Resilient Substrate Against Laser Fault Injection—The Future Platform for Secure Automotive Electronics
- It's Time to Look at FD-SOI (Again)
- Electronic Circuit Design for RF Energy Harvesting using 28nm FD-SOI Technology
- MEGATRON: a 28nm Analog PCM CiM/Digital System-on-Chip for Edge GenAI at 57.5 TOPS/W and 1.52 Mparam/mm²
- A 0.32 mm² 100 Mb/s 223 mW ASIC in 22FDX for Joint Jammer Mitigation, Channel Estimation, and SIMO Data Detection
Related Products
- MIPI D-PHY Transmitter/Receiver for Samsung 28nm FD-SOI
- GLOBALFOUNDARIES 22nm FDSOI LVDS Transceiver Pad
- Samsung 28nm FDSOI MIPI DPHY V1.1
- Samsung 28nm FDSOI 1.8v/1.0v LVDS Transmitter
- Samsung 28nm FDSOI 1.8v/1.0v sub-LVDS Receiver
See all 70 related products in the Catalog
Related Blogs
- FDSOI Status and Roadmap
- FD-SOI vs FinFET: Dan Hutcheson Re-Runs His Survey
- FD-SOI State of the Union: There's Supply - Is There Demand?
- Silicon on Nothing: the Origins of FD-SOI
- GloFo's 12nm FD-SOI: why it makes headlines in China
Related News
- GF unveils roadmap to deliver the world’s most advanced FD-SOI platform for Physical AI
- CEA‑Leti Advances European FD-SOI Innovation with GlobalFoundries’ Collaboration in the FAMES Pilot Line
- Quobly marks a new milestone towards industrialization with Soitec’s 28Si FD-SOI substrates now cycling in ST’s 300mm fab
- Soitec and CEA partner to develop automotive cybersecurity with advanced FD-SOI technology
- VeriSilicon Introduces FD-SOI Wireless IP Platform for Diverse IoT and Consumer Electronics Applications
The Pulse
- Weebit Nano Q1 FY27 Activities Update
- Minimum RISC-V: Maximum FPGA Efficiency
- Secure Boot on AMD Zynq Z-7020: Getting started with KiviBoot-Tiny
- INTERA Launches EAGLE Cognit, Bringing Ultra-Low-Power Near-Memory AI Acceleration to Next-Generation Edge Devices
- AeroTSN-EP in Action: SOC-E Brings Live Aerospace TSN Demonstration to A&D TSN Summit 2026
- The Era of Vibe Tapeout: Dark Age or Golden Age for Analog Circuit Design?
- Engineering FPGA Products: Moving Beyond RTL
- Why Post-Quantum Security Starts with the Chip
- Agnisys and Axiomise Collaborate to Accelerate NoC Design and Formal Sign-off
- TSMC Reports Third Quarter EPS of NT$29.43
- Understanding the Power Consumption of Modern High Bandwidth Memory: Experimental Analysis and Modeling Using Real HBM2 DRAM Chips
- ChipAgents Collaborates With NVIDIA to Launch Build-A-Chip-Bench for Autonomous Chip Design and Implementation
- Quintauris and Microchip Technology join forces to grow RISC-V® adoption
- BrainChip Launches Sequora: Edge AI That Doesn’t Just Recognize — It Understands and Responds
- GlobalFoundries selected to operate two new semiconductor fabs in New York under landmark U.S.-Japan initiative