TSMC Tweaks 16nm FinFET to Match Intel
Peter Clarke, Electronics360
January 20, 2014
Leading foundry Taiwan Semiconductor Manufacturing Co. Ltd. has said that it is developing a second transistor structure for its 16nm FinFET node, which will provide a 15 percent improvement in performance or power consumption.
Of particular note are Co-CEO Mark Liu's comment that the enhancement would put TSMC's 16nm FinFET process on a par with 16nm FinFET from Intel.
To read the full article, click here
Related Semiconductor IP
- NPU IP
- JPEG XL Encoder
- I2C Master/Slave Controller Core
- NVMe Validation Test Suite
- Hybrid Memory Cube Verification IP
Related News
- Credo 16-nm 28G and 56G PAM-4 SerDes Now Available on TSMC FinFET Compact Process
- Sidense Demonstrates Successful 1T-OTP Operation in TSMC 16nm FinFET Process
- Cadence Delivers IP for Automotive Applications with TSMC's Advanced 16nm FinFET C Process
- Synopsys Interface IP Portfolio on 16-nm FinFET Process Meets Stringent Automotive AEC-Q100 Grade 1 Temperature Requirements
Latest News
- GF unveils roadmap to deliver the world’s most advanced FD-SOI platform for Physical AI
- GlobalFoundries marks Dresden expansion milestone, announces next-generation platform for Physical AI
- TSMC September 2026 Revenue Report
- Lattice Collaborates with Arm to Advance Secure, Adaptable AI Data Center Infrastructure
- ZLG Selects CAST CAN XL and TSN IP for Next-Generation Vehicle-Network Development and Test Tools