Silicon Nanowire Remains Favorite to Replace FinFET
Peter Clarke, Electronics360
June 16, 2015
Silicon-based nanowire transistors (NWTs)—otherwise known as gate-all-around transistors—are getting ready to replace FinFETs at the 7nm or 5nm integrated circuit (IC) manufacturing nodes, according to experts in the field.
Although the alternatives of vertical versus lateral orientation and silicon, germanium, carbon or III-V compound semiconductor materials in the transistor channel provide a broad set of possibilities, one source of uncertainty is determining what 7nm or 5nm means in the context of the upcoming IC manufacturing nodes.
To read the full article, click here
Related Semiconductor IP
- Verification IP for C-PHY
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
Related News
- Attopsemi Scales I-fuse® Technology to 7nm FinFET following 12nm Silicon Success
- Silicon Creations Announces 1000th Production FinFET Tapeout at TSMC and Immediate Availability of Full IP Library on TSMC N2 Technology
- Texas Instruments to acquire Silicon Labs
- Amid rising cyber threats, EnSilica joins the CHERI Alliance to enable safe & secure silicon
Latest News
- JEDEC Advances DDR5 MRDIMM Ecosystem with New Memory Interface Logic and Expanded MRDIMM Roadmap
- Altera Brings Determinism to Physical AI Systems with Latest Release of FPGA AI Suite
- Mosaic SoC raises $3.8M to bring real-time spatial intelligence to every consumer device
- UMC Reports First Quarter 2026 Results
- Rambus Appoints Sumeet Gagneja as Chief Financial Officer