Samsung Electronics Acquires Grandis, Inc.
SEOUL, South Korea--August 02, 2011--Samsung Electronics Co., Ltd., the world leader in advanced memory technology, today announced acquisition of Grandis, Inc. (based in Silicon Valley, California), a leader in spin transfer torque random access memory (STT-RAM). Grandis will be merged into those Samsung's R&D operations that are focused on developing the next evolution of memory, where new semiconductor materials and structures are reviewed for their long-term commercial value. With its expertise in next-generation memory solutions and strong technical capabilities, Grandis will contribute to Samsung’s continued development of cutting-edge memory semiconductor technologies and become a key part of the company’s global R&D network.
Effective late July, the acquisition includes the full scope of technology, assets and human resources under Grandis, Inc. Further details of the transaction were not disclosed.
Related Semiconductor IP
- NPU IP
- JPEG XL Encoder
- I2C Master/Slave Controller Core
- NVMe Validation Test Suite
- Hybrid Memory Cube Verification IP
Related News
- Renesas Technology and Grandis to Collaborate on Development of 65 nm MRAM Employing Spin Torque Transfer
- Hynix and Grandis Sign License and Joint Development Agreement on Spin-Transfer Torque MRAM
- Marvell Completes Acquisition of Inphi
- Synopsys Completes Acquisition of MorethanIP
Latest News
- GF unveils roadmap to deliver the world’s most advanced FD-SOI platform for Physical AI
- GlobalFoundries marks Dresden expansion milestone, announces next-generation platform for Physical AI
- TSMC September 2026 Revenue Report
- Lattice Collaborates with Arm to Advance Secure, Adaptable AI Data Center Infrastructure
- ZLG Selects CAST CAN XL and TSN IP for Next-Generation Vehicle-Network Development and Test Tools