Samsung Plans 3nm Gate-All-Around FETs in 2021
Dylan McGrath, EETimes
5/23/2018 00:01 AM EDT
GAA technology has been under development since the early 2000s by Samsung and other firms. GAA transistors are field-effect transistors (FET) that feature a gate on all four sides of the channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.
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