MoSys Inks Agreement With SMIC to Provide High-Density 1T-FLASH Memory IP

Leading Chinese Foundry to Support MoSys' 1T-FLASH Technology

SUNNYVALE, Calif. -- March 14, 2007 -- MoSys, Inc. (Nasdaq: MOSY), the industry's leading provider of high-density system-on-chip (SoC) embedded memory intellectual property (IP) solutions, announced today that it has extended its partnership with China's leading foundry, Semiconductor Manufacturing International Corporation (SMIC) (NYSE: SMI), to include MoSys' new high-density embedded flash memory IP.

Under the terms of the agreement, the companies are collaborating on the establishment of MoSys' 1T-FLASH on SMIC's manufacturing processes. MoSys' 1T-FLASH is an extremely high density NOR flash replacement and is being implemented on SMIC's pure logic CMOS processes. No additional process masks or materials are required.

MoSys' 1T-FLASH will offer developers of mobile devices, such as cellular phones, and developers of embedded microcontrollers significant cost advantages over current-generation solutions.

"Together with SMIC, we can offer a very compelling solution for SoC designers who want to integrate large amounts of high-performance flash memory," said Chet Silvestri, president and CEO of MoSys.

About MoSys Inc.

Founded in 1991, MoSys (Nasdaq: MOSY) develops, licenses and markets industry-leading embedded memory IP for semiconductors. MoSys' patented 1T-SRAM and flash technologies offer a combination of high density, low power consumption, high speed and low cost that is unmatched by other memory technologies. MoSys licensees have shipped more than 100 million chips incorporating 1T-SRAM, demonstrating excellent manufacturability in a wide range of silicon processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available at http://www.mosys.com .