FinFETs Not the Best Silicon Road
Handel Jones, International Business Strategies Inc.
EETimes (3/27/2014 05:05 PM EDT)
Specifically, next-generation 20nm bulk high-K metal gate CMOS and 16/14nm FinFET process will deliver smaller transistors. However, they will also have a higher cost per gate than today's 28nm bulk HKMG CMOS.
To read the full article, click here
Related Semiconductor IP
- Camera Post-Processing IP
- DC-DC Split-Pi Boost-Buck Converter
- Deep learning accelerator
- MIL-STD-1553 Controller IP
- UFS 5.x Device IP
Related News
- Law firm urges Supreme Court to decide Rambus vs. Infineon
- The Great Debate: SOC vs. SIP
- Process vs. density in DRAMs
- Balancing cost vs. security for embedded design
Latest News
- VeriSilicon Introduces CPP2000 Camera Post-Processing IP for Embodied Robotics and Mobile Vision Applications
- Infineon opens the world's largest fab for power semiconductors and analog/mixed-signal technologies in Dresden
- Tenstorrent Sets New Performance Records, Launches TT- Ascalon S, and Expands Across Japan
- Chips&Media Signs APV codec IP Licensing Deal with North American Big Tech, Establishing the ‘Second Front’ Against Apple’s ProRes
- Chipsolve Technologies Appoints Balaji Kanigicherla as Chairman of the Board