Chip Makers Must Learn New Ways to Play "D"
By Don Scansen, EETimes (March 19, 2021)
We used to think of planar transistors in the glory days of classical Dennard scaling in two-dimensional terms. Material specifications were simplified into things like sheet resistance in ohms per square. The abstraction of the devices was was all 2-D, and most of the assumptions and the device modeling for understanding MOSFET operation for circuit design were simplified as much as possible to a pair of axes.
We might have thought of planar MOSFETs as 2-D transistors, at least until the assumptions broke down and the complexity of the device physics took off.
Eventually, planar CMOS turned to the third dimension with Intel’s TriGate and other flavors of the finFET. We called these 3-D transistors.
To read the full article, click here
Related Semiconductor IP
- Hybrid Memory Cube Verification IP
- nQrux® Root of Trust IP
- AXI to UCIe Bridge IP
- UCIe 2.x Controller IP
- SWI3S (SoundWire I3S Interface) Peripheral Controller Core IP
Related News
- Chip makers must shift from fabs to systems
- Cadence Unleashes ChipStack AI Super Agent, Pioneering a New Frontier in Chip Design and Verification
- SOC-E and SafeCore Devices to unveil a new TSN End Point IP Core: AeroTSN-EP
- StarFive and LECARC Forge Partnership to Co-Develop RISC-V Server CPUs and Seize New Opportunities in the Agentic AI Era
Latest News
- RaiderChip’s Edge NPU reaches more than 50 Generative AI Models with the addition of Qwen3.8-27B
- Aion Silicon Named Design Solution Associate in New Rapidus CORE Ecosystem for 2nm Semiconductors
- Arteris Wins Funding to Expand Hardware Design Supply Chain Security Assurance for the Trusted and Assured Microelectronics Program
- UMC Reports Sales for September 2026
- LUBIS EDA Launches FormalOS: Infrastructure for Systematic, Scalable Formal Verification