Alphawave IP aims for 100 engineers in UK design center
By Peter Clarke, eeNews Analog (April 22, 2021)
Senior executives at serdes IP licensor Alphawave IP Group plc have indicated they want to employ 100 engineers at a UK design center in Cambridge within a few years.
Alphawave IP is looking open up in Cambridge as part of a process of relocating the company headquarters from Toronto, Canada, to London and staging an initial public offering of shares that could see the company valued at US$4.5 billion (see Alphawave IP plans London IPO, Cambridge design centre).
"When we hire we don't hire in ones and twos," said Tony Pialis the co-founder and CEO of the company, in an interview with eeNews Europe. "We hire a team. For us a team is 20 to 30 people. In the medium-term I would expect to have multiple teams operating out of Cambridge," Pialis said.
Although Alphawave is looking to expand strongly in Cambridge it will continue with design groups it currently operates in Toronto, Mexico and India, the company's executive chairman John Lofton Holt, said.
To read the full article, click here
Related Semiconductor IP
- nQrux® Root of Trust IP
- AXI to UCIe Bridge IP
- UCIe 2.x Controller IP
- SWI3S (SoundWire I3S Interface) Peripheral Controller Core IP
- OpenTitan-based RISC-V Secure Element
Related News
- Codasip Opens UK Design Center led by Simon Bewick
- Veriest expands to Physical Design and opens UK design center
- SiFive Expands Global Operations, Opens UK R&D Center in Cambridge
- Alphawave Semi Showcases 3nm Connectivity Solutions and Chiplet-Enabled Platforms for High Performance Data Center Applications
Latest News
- Year-to-Date Global Semiconductor Sales Top $1 Trillion Through August
- Xiphera launches nQrux® Root of Trust with Post-Quantum Cryptography
- Skyechip Joins Rapidus Core Ecosystem, Bringing Advanced Silicon IP For AI and HPC to Japan's 2nm Platform
- GUC Monthly Sales Report – September 2026
- Rapidus Unveils “Rapidus CORE”, New Global Ecosystem Framework Supporting the Development and Mass Production of Cutting-Edge Semiconductors