Manufacturing RRAM: Challenges & Opportunities
Non-volatile resistive random access memory (RRAM), widely considered by analysts and other leading experts to be the most viable alternative to NAND, offers clear advantages in cost, manufacturability, and gains in overall system performance. There is no question that current NAND technology has hit its scaling limits at the 1Y node. While 3D-NAND is considered to be the next alternative to NAND by enabling continuous cost reduction and scaling, the technology suffers from cell performance issues and poor on/off ratios, resulting in increased system complexity.
Challenges
In order for a technology to succeed in a 3D architecture, it must deliver a significant increase in density, with a lower cost per bit compared to current Flash solutions, and it must accomplish this with a cell that performs better than existing cells. If these two requirements are not met, a 3D memory will fail to meet the capacity, density, and cost expectations of customers designing next-generation products.
To read the full article, click here
Related Semiconductor IP
- Zigbee Transceiver PHY
- Data Flow Architecture IP
- AMBA SPI Controller MRAM Controller
- Ethernet MAC
- Protocol Bridges
Related Blogs
- Navigating Challenges and Embracing Opportunities in 2024
- Using SystemC TLM Modeling To Solve AI Data Movement Challenges
- Some thoughts on VLSI manufacturing in India
- 450mm Semiconductor Manufacturing Debate
Latest Blogs
- IDS-NoC: A Scalable Interconnect Solution for Modern SoC Design
- Leading-edge AI IC designs demand comprehensive HAV methodologies
- Beyond the Fab: Building Europe’s Next Generation of Semiconductor Champions
- AI Semiconductor Design at 3nm and 2nm: Silicon-Proven IP
- Samsung Foundry and Cadence Expand Infrastructure and Physical AI Solution