IEDM 2017 - Intel Versus GLOBALFOUNDRIES at the Leading Edge
December 18, 2017
As I have discussed in previous blogs, IEDM is one of the premier conferences to learn about the latest developments in semiconductor technology.
On Wednesday December 6th, the Circuit and Device Interaction - Advanced Platform Technologies session was held, and Intel presented their 10nm technology and GLOBALFOUNDRIES (GF) presented their 7nm technology. Despite the different node names, the two processes have similar density. In this article I will combine previous disclosures, interviews and the papers to present a detailed comparison of these two leading edge technologies.
To read the full article, click here
Related Semiconductor IP
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
Related Blogs
- UMC versus GLOBALFOUNDRIES
- Redefining the Foundry Model: TSMC versus GlobalFoundries
- TSMC versus GlobalFoundries: Semiconductor Design Enablement!
- GlobalFoundries Versus Samsung!
Latest Blogs
- AI in Design Verification: Where It Works and Where It Doesn’t
- PCIe 7.0 fundamentals: Baseline ordering rules
- Ensuring reliability in Advanced IC design
- A Closer Look at proteanTecs Health and Performance Management Solutions Portfolio
- Enabling Memory Choice for Modern AI Systems: Tenstorrent and Rambus Deliver Flexible, Power-Efficient Solutions