28nm FD-SOI: A Unique Sweet Spot Poised to Grow
I have been silently watching STMicroelectronics pursuing FD-SOI technology since quite a few years. FinFET was anyway getting more attention in the semiconductor industry because of several factors involved. But from a technology as well as economic perspective there are many plus points with FD-SOI. I remember my debate, two years ago, with an IP provider for choosing between FD-SOI and FinFET for some of his IP blocks. Although we were more positive towards FD-SOI the debate was inconclusive at that time, but today the 28nm FD-SOI technology node stands to win as the best value added proposition for the emerging markets such as IoT, automotive, consumer, mobile, and so on. To expand the FD-SOI technology ST has also signed strategic licensing of their 28nm FD-SOI technology with other foundries including Samsung and GLOBALFOUNDRIES. Samsung entered into licensing agreement with ST for manufacturing collaboration on 28nm FD-SOI in mid 2014.
To read the full article, click here
Related Semiconductor IP
- Band-Gap Voltage Reference with dual 2µA Current Source - X-FAB XT018
- 250nA-88μA Current Reference - X-FAB XT018-0.18μm BCD-on-SOI CMOS
- UCIe D2D Adapter & PHY Integrated IP
- Low Dropout (LDO) Regulator
- 16-Bit xSPI PSRAM PHY
Related Blogs
- ST To Run 28nm FD-SOI NovaThor Next Week
- 28nm FD-SOI: Samsung & ST's Major Opportunity
- How many 28nm FDSOI SoC Design Starts in 2015? In 2020?
- Moore's Law and 28nm Yield
Latest Blogs
- AI in Design Verification: Where It Works and Where It Doesn’t
- PCIe 7.0 fundamentals: Baseline ordering rules
- Ensuring reliability in Advanced IC design
- A Closer Look at proteanTecs Health and Performance Management Solutions Portfolio
- Enabling Memory Choice for Modern AI Systems: Tenstorrent and Rambus Deliver Flexible, Power-Efficient Solutions