Omni Design Technologies, Inc. is a developer of disruptive, ultra-low power semiconductor embedded circuits (IP Cores), including ultra-low power analog circuits, highly-efficient interface circuits and connected sensors. Our patented and proprietary technology offers solutions that use dramatically lower power and provide superior performance, architected from the ground up to take advantage of deep sub-micron CMOS processes. Omni Design’s mission is to provide a wide range of ultra low-power, high performance embedded circuits configured to enable highly-differentiated semiconductor systems and plug-and-play system-on-chip (SoC) development. Our IP offerings target SoCs that address a wide range of application areas including IoT, test and measurement, high speed interfaces, communications, medical imaging, and sensor hubs. Omni Design Technologies, Inc. is a privately held company with offices in Milpitas, CA and Boston, MA. Omni Design was founded in 2015 by a team of semiconductor industry veterans, technologists, and experienced entrepreneurs with a successful track record of delivering high performance analog solutions that advance the state of the art.
14-bit, 8-GSPS IQ DAC on GF 22FDX
The ODT-DAC-14B8GIQ-GF22FDX is a high performance dual channel current steering 14- bit DAC that operates as an IQ Pair with an u…
12 bit, 500 MSPS ADC on GF 22FDX
The ODT-ADS-12B500M-G22FDX is an ultra-low power ADC designed in a 22nm CMOS process.
Ultra-Low-Power Temperature/Voltage Monitor on TSMC 16nm FFC
The ODT-TVM-ULP-001C-16FFCT is an ultralow power temperature and voltage monitor designed in a 16nm standard TSMC process.
Ultra‐Low‐Power Process/Voltage/Temperature Monitor on TSMC 7nm FFC
The ODT-PVT-ULP-001C-7T is an ultra-low power temperature, voltage and process monitor designed in a 7nm CMOS process.
High Drive Strength Voltage Buffer on TSMC 16 FFC
The ODT-OBF-ULP-DC-16FFCT is a voltage buffer with a high drive capability and is stable up to a 1nF output load.
12 bit, 200 MSPS ADC on TSMC 16nm FFC
The ODT-ADS-12B200M-16FFCT is an ultra low power ADC designed in a 16nm CMOS process.
6-bit, 400 MSPS High Performance ADC in 28nm CMOS
The ODT-ADS-6B400M-2HPCT8 is a low power, high-performance SAR ADC designed in a 28nm CMOS process.
The ODT-UCIE-UNI-TX-16GXX-16FFCT is a low power D2D transmitter IP in TSMC 16FFC process.
The ODT- UCIE-UNI-RX-16GXX-S8 is a low power D2D receiver IP in Samsung 8nm process.
Ultra high-performance low-power ADC
The ODT-ADS-12B5G-T28 is an ultra-highperformance time-interleaved ADC designed in a 28nm CMOS process.
Ultra Low-Power High-Performance AFE on TSMC 16nm
The ODT-AFE-8D8IF-12FFCT is an ultra-highperformance AFE designed in a TSMC 16nm process.
Internally compensated LDO with 100mA load Capability on a 4nm process
The ODT-LDO-IC-100M-4nm is a low dropout (LDO), linear regulator for integration in a SoC.
High-performance reference current and voltage generator in TSMC 4nm CMOS
The ODT-REF-SV1P2_4nm is a high-performance reference current and voltage generator.
1.8V programmable voltage and current reference on TSMC 16nm FFC
The ODT-REF-16FFCT-SV1P8 is a highperformance reference current and voltage generator.
12-bit 250MHz interpolation filter with 43 taps on TSMC 16nm
The ODT-DSP-INT-43T250M-T16 is a 12-bit 250MHz interpolation filter with 43 taps in a 12/16nm CMOS process.
12-bit 250MHz Decimation filter with 43 taps
The ODT-DSP-DEC-43T250M-T16 is a 12-bit 250MHz Decimation filter with 43 taps in a 12/16nm CMOS process.
12 bit 250MSPS ADC on TSMC 7nm
The ODT-ADS-12B250M-7T is an ultra-low power ADC designed in a 7nm CMOS process.
Ultra-Low-Power Temperature/Voltage Monitor in GF 22FDX
The ODT-TVM-ULP-001C-GF22FDX is an ultra-low power temperature and voltage monitor designed in a 22nm process.
Low dropout regulator (LDO), 25mA output current on GF 22FDX
The ODT-LDO-IC-25M-GF22FDX is a low dropout (LDO), linear regulator for integration in a SoC.
12-bit, 4 GSPS High Performance IQ ADC in GF22FDX
The ODT-ADS-12B4GIQ-GF22FDX is an ultra high-performance, time-interleaved, dual channel ADC designed in a 22nm process.