Vendor: Faraday Technology Category: GPIO

UMC 55nm Embedded Flash and Embedded E2PROM Low Power Low-K Split-Gate Process Ture 3.3V Generic IO Cell Library

UMC 55nm Embedded Flash and Embedded E2PROM Low Power Low-K Split-Gate Process Ture 3.3V Generic IO Cell Library

UMC 55nm Pre-Silicon View all specifications

Overview

UMC 55nm Embedded Flash and Embedded E2PROM Low Power Low-K Split-Gate Process Ture 3.3V Generic IO Cell Library

Silicon Options

Foundry Node Process Maturity
UMC 55nm 55nm 550 nm Pre-Silicon

Specifications

Identity

Part Number
FOF0F_RHS25_T33_GENERIC_IO
Vendor
Faraday Technology
Type
Silicon IP

Files

Note: some files may require an NDA depending on provider policy.

Provider

Learn more about GPIO IP core

Faraday Reports First Quarter 2026 Results

First quarter consolidated revenues were NT$2,589 million, down 8% QoQ and 65% YoY. Gross profit was NT$1,225 million, up 3% QoQ but down 19% YoY, with gross margin reached 47.3%.

Frequently asked questions about GPIO Pad Library IP cores

What is UMC 55nm Embedded Flash and Embedded E2PROM Low Power Low-K Split-Gate Process Ture 3.3V Generic IO Cell Library?

UMC 55nm Embedded Flash and Embedded E2PROM Low Power Low-K Split-Gate Process Ture 3.3V Generic IO Cell Library is a GPIO IP core from Faraday Technology listed on Semi IP Hub. It is listed with support for umc Pre-Silicon.

How should engineers evaluate this GPIO?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this GPIO IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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