RF ESD library in TSMC 55nm LP
RF ESD cells in TSMC 55nm LP targetting low-capacitance ESD protection.
- TSMC
- 55nm
- GP
ESD Protection Library IP cores provide the pad-level interface between silicon and the package or board environment in modern SoC and ASIC designs.
These IP cores support pad and protection structures that harden chip interfaces against electrostatic discharge events, helping designers create robust I/O implementations across digital, analog, and high-speed domains
This catalog allows you to compare ESD Protection Library IP cores from leading vendors based on signal integrity, robustness, integration fit, and process node compatibility.
Whether you are designing all chip I/O domains, industrial products, consumer devices, or automotive electronics, you can find the right ESD Protection Library IP for your application.
RF ESD library in TSMC 55nm LP
RF ESD cells in TSMC 55nm LP targetting low-capacitance ESD protection.
6.5V ESD Clamp in 180nm Technology
Standalone 6.5V ESD Power Clamp in 180nm technology for use in wirebond or flipchip.
5V ESD Clamp in GlobalFoundries 180nm LPe
A GlobalFoundries 180nm LPe Specialized 5V ESD Clamp.
USB 2.0 OTG ESD Protection I/O Pad Set
The USB 2.0 OTG ESD Protection library provides a comprehensive ESD solution for USB 2.0 hard macro cells.
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.8V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.8V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.05V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HLP/RVT Process, 1.05V Analog ESD IO cell Library
UMC 55nm e-flash Logic Process , 3.3V Analog ESD IO cell Library
UMC 55nm e-flash Logic Process , 3.3V Analog ESD IO cell Library
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm LL-RVT (Low-K) Process with 3.3V device analog esd IO group (with BOAC)
UMC 90nm LL-RVT (Low-K) Process with 3.3V device analog esd IO group (with BOAC)
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm LL/RVT LowK process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT Low-K process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
UMC 90nm SP/RVT Low-K process true 3.3V Analog ESD IO cell Library Using 3.3V GOX52 IO
M31 ESD I/O in TSMC 12nm, 16nm, 22nm, 28nm. 40nm, 55nm,90nm,180nm
M31’s I/O Libraries now include integrated ESD cell designs for General I/O, eMMC I/Os, SDIOs, and ONFI I/O.
On-chip ESD/EOS/Latch up protection for advanced and low voltage processes
Scalable on-chip HBM (MM) levels Some applications need higher ESD robustness levels.
UMC 28nm Logic and Mixed-Mode HPC Process 3.3V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HPC Process 3.3V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HPC Process, 1.8V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HPC Process, 1.8V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HPC Process,0.9V Analog ESD IO cell Library
UMC 28nm Logic and Mixed-Mode HPC Process,0.9V Analog ESD IO cell Library
SMIC 65nm LL Local ESD protection cell
IP
SMIC 55nm LL ESD protection cell
IP
Specialty Analog ESD IO IP, UMC 55nm CIS process
3.3V Analog ESD IO with UMC 55nm LP/HVT CMOS Image Sensor process.