2GHz-6GHz High Efficiency Broadband Low Noise Amplifier
The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35-ìm SiGe BiCMOS technology.
Overview
The RS03 is 2 to 6 GHz; high efficiency Broadband Single Stage Low noise amplifier, designed on 0.35-ìm SiGe BiCMOS technology. The device is designed for use in the 802.11a/b/g and WLAN MIMO system.
The noise figure is 1.5 dB and it has an extremely small die area of 0.6mm x 0.57mm. The device works with single 3.3 V supply voltage and draws11.8 mA of current.
Key features
- Wide Band Operation
- Low noise as low as 1.5 dB
- Small Size
Specifications
Identity
Files
Note: some files may require an NDA depending on provider policy.
Provider
Learn more about Amplifier IP core
Designing the Beam Steering Core for a C-Band AESA: A Look at VSI's VBF0644 GaAs Beamformer IC
Powering the Future of RF: Falcomm and GlobalFoundries at IMS 2025
Real-Time ESD Monitoring and Control in Semiconductor Manufacturing Environments With Silicon Chip of ESD Event Detection
Novel Trade-offs in 5 nm FinFET SRAM Arrays at Extremely Low Temperatures
Linearity Analysis of Source-Degenerated Differential Pairs for Wireline Applications
Frequently asked questions about Amplifier IP cores
What is 2GHz-6GHz High Efficiency Broadband Low Noise Amplifier?
2GHz-6GHz High Efficiency Broadband Low Noise Amplifier is a Amplifier IP core from RFIC Solutions, Inc. listed on Semi IP Hub.
How should engineers evaluate this Amplifier?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.