NSCore's One-Time Programmable Memory Completes Qualification at TSMC 65nm and 0.18um Technologies

Customers Will Begin Volume Production in December

FUKUOKA, Japan-- November 16, 2011 --NSCore, Inc., a semiconductor, logic non-volatile memory (NVM) intellectual property (IP) company, announced today that its PermSRAM® embedded one-time program (OTP) NVM technology has passed qualification in both TSMC 65nm low power (LP) and 0.18um generic (G) technologies according to TSMC9000 requirements. Several customers are in volume production at 0.18um already, while early customers will start volume production at 65nm LP in December 2011.

“Through this qualification process, NSCore has demonstrated the viability of its OTP technology for customers designing on TSMC 65nm LP and 0.18um G processes,” said Richard Lee, TSMC IP Alliance Program Manager.

"NSCore's TSMC9000 qualification of their PermSRAM gave us confidence that their OTP NVM is a reliable and trusted solution,” said Lew Adams, CTO of GainSpan, a Wi-Fi semiconductor solutions provider. "The macro from NSCore is being deployed in our TSMC65 LP design and provides a very attractive and efficient area utilization, thus saving us in production costs over the lifetime of the product."

“We are excited NSCore’s OTP IP has passed TSMC9000 qualification on TSMC technologies,” said NSCore president and CEO, Tada Horiuchi. “PermSRAM® OTP provides both small macro area and robust testability, both leading to increased yield and ultimately lower production costs. With the assurance of the TSMC9000 qualification, we can offer a very compelling OTP solution to our customers.”

About PermSRAM® and NSCore, Inc.

Founded in 2004, NSCore develops, licenses, and markets innovative non-volatile memory technologies for SoC semiconductors which are implemented on high volume, standard CMOS processes without extra steps, masks or process modifications. NSCore’s patented PermSRAM® offers the optimum combination of an extremely small macro size, fast READ/WRITE and fully testable solution. PermSRAM®’s process portability, high yield and automotive level reliability gives SoC design engineers full confidence to deploy the non-volatile memory solution in their integrated circuits. For more information, please visit www.nscore.com.