Samsung to Invest $7 Billion in China Fab
Alan Patterson, EETimes
8/29/2017 11:31 AM EDT
The investment is for a new fab in Xi’an that would be the second chip facility at the northern China site. On Monday (Aug. 28), Samsung approved $2.3 billion of the expected investment of $7 billion, according to reports by Reuters and Bloomberg that said the South Korea-based chipmaker was their news source.
To read the full article, click here
Related Semiconductor IP
- DC-DC Split-Pi Boost-Buck Converter
- Deep learning accelerator
- MIL-STD-1553 Controller IP
- UFS 5.x Device IP
- UCIe 3.x Controller IP
Related News
- Exec tried to set up copy-cat Samsung fab in China
- Foxconn Reportedly Readies Chip Fab in China
- Samsung Selects Texas as Site for $17 Billion Fab
- Samsung fab cobbling IP offerings for data-intensive SoCs
Latest News
- TES offers a new DC-DC Split-Pi Boost-Buck Converter IP in X-FAB XT018-0.18µm BCD-on-SOI CMOS
- Floadia Releases High-Performance Automotive Embedded Flash IP on Leading Foundry’s 90BCD Platform
- Real Intent Meridian CDC with Microarchitectural Analysis (MA) Transforms Clock Domain Crossing Sign-Off
- BrainChip Announces Commercial Availability and Production Shipments of AKD1500 Neuromorphic Processors
- Allegro DVT plays a pivotal role in groundbreaking CHASSIS Automotive Base Die development