MoSys Announces Fourth Quarter 2008 Outlook
SUNNYVALE, Calif. -- Dec 19, 2008 -- MoSys, Inc., (NASDAQ: MOSY), a leading provider of high-density system-on-chip (SoC) memory intellectual property (IP), today announced that it expects total net revenue to range from $3.8 million to $4.1 million and expects an estimated net loss on a GAAP basis ranging from $6.9 million to $7.5 million for the three months ending December 31, 2008. Estimated total net revenue for the year ending December 31, 2008 is expected to range from $13.9 million to $14.2 million, and the estimated net loss on a GAAP basis for that same period is expected to range from $18.9 million to $19.5 million. These ranges include estimated restructuring charges of up to $3.3 million to be recorded in the fourth quarter associated with the Company's recently announced initiative to exit from its analog/mixed-signal product lines.
About MoSys, Inc.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses innovative embedded memory intellectual property (IP) technologies for advanced SoCs used in a variety of home entertainment, mobile consumer, networking and storage applications. MoSys' patented 1T-SRAM and 1T-FLASH technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. MoSys' embedded memory IP has been included in more than 160 million devices demonstrating silicon-proven manufacturability in a wide range of processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
About MoSys, Inc.
Founded in 1991, MoSys (NASDAQ: MOSY), develops, markets and licenses innovative embedded memory intellectual property (IP) technologies for advanced SoCs used in a variety of home entertainment, mobile consumer, networking and storage applications. MoSys' patented 1T-SRAM and 1T-FLASH technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. MoSys' embedded memory IP has been included in more than 160 million devices demonstrating silicon-proven manufacturability in a wide range of processes and applications. MoSys is headquartered at 755 N. Mathilda Avenue, Sunnyvale, California 94085. More information is available on MoSys' website at http://www.mosys.com.
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