TSMC 28nm Design Advisory
February 1, 2010
Transistors may be shrinking but atoms are not. Transistors are now just a handful of atoms so it matters even more when a couple of those atoms are out of place. Process variations, whether they are statistical, proximity, or otherwise, have got to be thoughtfully accounted for if we are to achieve the low-power, high-performance, and high yield design goals at 28nm.
Related Semiconductor IP
- Ultra Ethernet MAC & PCS 100G/200G/400G/800G
- Ethernet PCS 100G/200G/400G/800G/1.6T
- Ethernet MAC 100G/200G/400G/800G/1.6T
- Junction Over-Temperature Detector with Linear Centigrade-to-Voltage Output - X-FAB XT018
- Performance P570 Gen 3
Related Blogs
- The Truth of TSMC 28nm Yield!
- TSMC 28nm Beats Q1 2012 Expectations!
- TSMC Gets 28nm Yield Up Over 80%
- TSMC 28nm Update Q3 2012!
Latest Blogs
- Inside the SiFive Performance™ P570 Gen 3: High Performance Efficiency for Next-Generation Consumer and Commercial Applications
- What the steam engine can teach us about modern chip design
- Automotive silicon in the era of AI, functional safety, and cybersecurity
- JPEG XS Officially Joins GenICam, The Machine Vision Standard Managed By EMVA
- Beyond PCIe Compliance: Why Stress Testing Is Crucial for Edge AI Deployments