Unlocking High-Speed Connectivity with Certus Semiconductor’s LVDS Transceiver on GlobalFoundries 12LP/LP+
April 22, 2025 -- In today’s data-driven world, high-speed, low-power communication is essential. Certus Semiconductor’s LVDS Transceiver delivers exactly that—optimized for GlobalFoundries’ 12nm CMOS process, it provides reliable, high-performance Low-Voltage Differential Signaling (LVDS) for next-generation designs.
Built for Performance:
This 0.8V LVDS transceiver is built on GlobalFoundries’ advanced 12nm process, leveraging:
- 0.8V core devices & 1.8V I/O devices for optimal efficiency
- A sophisticated BEOL stack ensuring signal integrity
- Verified on GF’s 12nm PDK (Version V1.0_4.0, Sept. 2024) for robust manufacturability
Radiation-Hardened by Design
For applications in aerospace and radiation-sensitive environments, this Transceiver can be made rad-hard using silicon-proven ESD cells. These cells have successfully passed:
- Proton Testing up to 64 MeV
- Heavy Ion SEE Testing (LET 85)
- Proven in production within a separate product line
Key Features & Functionality
Designed for high-speed differential signaling, it supports:
- Differential I/O pads (PADA/PADB) @ 1.8V
- On-Die Termination (ODTEN) with 100Ω resistor
- Pre-emphasis (EMPH) for enhanced signal quality
- TX & RX support up to 3.0 Gbps with low latency
Performance at a Glance
- TX Output Amplitude: ~384.9mV (100Ω load)
- Faster Rise/Fall Times with Pre-emphasis
- Propagation & Enable Delays optimized for high-speed systems
- Eye Diagrams demonstrate strong signal integrity across different loads & speeds
Why Certus Semiconductor’s Solution?
With a power-efficient, high-speed design and proven rad-hard capabilities, this Transceiver is ideal for mission-critical systems in communications, aerospace, and high-performance computing. Backed by Certus Semiconductor’s expertise, this library ensures seamless integration into GF 12nm designs while maximizing performance and reliability.
Ready to enhance your design? Get in touch with Certus Semiconductor today.
Related Semiconductor IP
- GF12 - 0.8V LVDS Rad-Hard Transceiver in GF 12nm
- Rad-Hard GPIO, ODIO & LVDS in SkyWater 90nm
- 1 Gb/s LVDS Bidirectional IO on 12nm
- LVDS IO Pad Set
- HDMI, LVDS, RF and Analog Pads in TSMC 45/40nm
Related News
- Certus releases radiation-hardened I/O Library in GlobalFoundries 12nm LP/LP+
- Certus Semiconductor releases ESD library in GlobalFoundries 12nm Finfet process
- LeWiz Open Source LVDS Transceiver Design
- GlobalFoundries and IDEMIA Secure Transactions to Enable Next-Generation Smart Card IC on GF 28ESF3 Platform
Latest News
- Quintauris and Andes Technology Partner to Scale RISC-V Ecosystem
- Europe Achieves a Key Milestone with the Europe’s First Out-of-Order RISC-V Processor chip, with the eProcessor Project
- Intel Unveils Panther Lake Architecture: First AI PC Platform Built on 18A
- TSMC September 2025 Revenue Report
- Andes Technology Hosts First-Ever RISC-V CON in Munich, Powering Next-Gen AI and Automotive Solutions