Intel confirms 450-mm fab plans
Mark LaPedus, EETimes
12/8/2010 3:13 PM EST
SAN FRANCISCO - Amid a flurry of speculation, Intel Corp. confirmed that its new fab in the United States is being constructed for the 450-mm wafer era. As reported, Intel will build a new R&D wafer fab in Hillsboro, Ore., and upgrade other existing U.S. facilities for 22-nm production at a total investment of between $6 billion and $8 billion.
To read the full article, click here
Related Semiconductor IP
- Specialized Video Processing NPU IP for SR, NR, Demosaic, AI ISP, Object Detection, Semantic Segmentation
- Ultra-Low-Power Temperature/Voltage Monitor
- Multi-channel Ultra Ethernet TSS Transform Engine
- Configurable CPU tailored precisely to your needs
- Ultra high-performance low-power ADC
Related News
- Intel German fab in doubt
- Intel considers foundry split, fab cancellations
- Commentary: Get ready for 450-mm fabs
- Intel, Samsung Electronics and TSMC Reach Agreement for 450mm Wafer Manufacturing Transition
Latest News
- Siemens accelerates integrated circuit design and verification with agentic AI in Questa One
- Weebit Nano achieves record half-year revenue; licenses ReRAM to Tier-1 Texas Instruments
- IObundle Releases Open-Source UART16550 Core for FPGA SoC Design
- Rapidus Secures 267.6 Billion Yen in Funding from Japan Government and Private Sector Companies
- DNP Invests in Rapidus to Support the Establishment of Mass Production for Next-Generation Semiconductors