Vendor: Certus Semiconductor Category: High-Speed

Three-Speed Inline Library with Open Drain I/0 in TSMC 22nm

A TSMC 22nm Inline, Flip Chip compatible library with three-speed GPIOs and I2C compliant ODIO.

TSMC 22nm ULL View all specifications

Overview

A TSMC 22nm Inline, Flip Chip compatible library with three-speed GPIOs and I2C compliant ODIO.

This silicon-proven, flip chip library in TSMC 22nm boasts three variants of GPIOs and one ODIO. All GPIO and ODIO cells have NS and EW orientation. All GPIO types are classified based on speed: 25MHz, 75MHz and 150MHz. All GPIO speed variants can operate at different post-driver voltage, which can be set at the system level and dynamically changed in the system if needed. The I/O includes a weak pull-up or pull-down resistor (approx. 60 Ohms). The ODIO is designed for lower speed interfaces but can be used as a high-voltage, high-speed input at up to 100MHz. The library is designed to allow for independent power sequences of any I/O cell, which is accomplished with an intrinsic power-on-control architecture. In the case of GPIO and ODIO, only when all powers are up and detected as ON, will the I/Os begin to function, otherwise they will remain in a high impedance state. Beyond standard ESD protection, the library is tolerant to 61000-4-2 IEC standard to 2kV.

 Operating Conditions

Parameter Value
VDDIO 1.8V or 3.3V
Core 0.7V/0.8V/0.9V
Tj -40C to 125C
ESD >2kV HBM, 500V CDM

 Cell Size and Metal Stack

Cell Size Metal Stack
30um x 130um 1P9M_6X1Z1U

Library Cell Summary

Cell Type Feature
Supply 1.8V always on
IO150 GPIO, operates at 150MHz (NS&EW)
IO75 GPIO, operates at 75MHz (NS&EW)
IO25 GPIO, operates at 25MHz (NS&EW)
ODIO Open-Drain I/O (NS&EW)

 Standards

  •   I2C and I3C
  •   eMMC, SPI, SMBus
  •   DDC, CEC, LPDDR
  •   ONFI, SDIO, LVCMOS
  •   UARTS

Block Diagram

Silicon Options

Foundry Node Process Maturity
TSMC 22nm ULL —

Specifications

Identity

Part Number
OG22
Vendor
Certus Semiconductor
Type
Silicon IP

Files

Note: some files may require an NDA depending on provider policy.

Provider

HQ: United States

Learn more about High-Speed IP core

CDM Dependence on Device Capacitance

This blog will focus on what happens during the CDM pulse itself, and will show how the pulse properties change as a function of DUT to Field Plate capacitance.

Field Induced CDM Explained

Integrated circuits are commonly tested for ESD robustness with 2 tests, Human Body Model (HBM) and Charged Device Model (CDM). Most engineers quickly grasp the procedure for HBM, but the CDM test is often poorly understood. This is unfortunate, because a large fraction of the ESD failures experienced in modern board assembly operations are CDM type failures. This article will describe the events which occur during a CDM test conducted using the widely accepted field induced CDM (FCDM) test.

One Platform, Five Libraries: Certus Semiconductor’s I/O IP Portfolio for Every Application on TSMC 22nm ULL/ULP Technologies

Certus Semiconductor’s I/O libraries for TSMC’s 22nm ultra-low leakage (22ULL) and 22nm ultra-low power (22ULP) technologies offer robust, high-performance solutions tailored to a wide range of SoC designs — from ultra-low power IoT nodes to demanding consumer and automotive systems. Whether you need low leakage, high drive strength, or analog compatibility, our production-proven IP covers it all.

Frequently asked questions about High-Speed I/O Pad IP

What is Three-Speed Inline Library with Open Drain I/0 in TSMC 22nm?

Three-Speed Inline Library with Open Drain I/0 in TSMC 22nm is a High-Speed IP core from Certus Semiconductor listed on Semi IP Hub. It is listed with support for tsmc.

How should engineers evaluate this High-Speed?

Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this High-Speed IP.

Can this semiconductor IP be compared with similar products?

Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.

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