IP Accelerated (Bye Bye EDA 360)
Eric Esteve
Vendor:
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Category:
MIPI PHY
Samsung 28nm FDSOI MIPI DPHY V1.1
Key features
- Process: Samsung FDSOI 28nm 0.9V/1.8V, metal option TBD.
- Compliant to the MIPI D-PHY spec v1.1
- Data rate per lane: High-Speed mode 80M~1.5G bps, Low-Power mode 10Mbps
- Lane type:1 clock + 2 data, bi-directional
- Support Reverse Escape mode (High-speed reverse is not supported)
- On-chip differential 100? terminations with calibration
- Built-in self test function
- Supply voltage: 1.8V±10%, 0.8V±10%
- Junction temperature range: -40°C~25°C~125°C
Silicon Options
| Foundry | Node | Process | Maturity |
|---|---|---|---|
| Samsung | 28nm | FDS | Silicon Proven |
Specifications
Identity
Part Number
SE28FDSOIV18_DPHY_01
Vendor
VeriSilicon Microelectronics (Shanghai) Co., Ltd.
Type
Silicon IP
Standards & Interfaces
MIPI PHY
MIPI D-PHY
Provider
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Frequently asked questions about MIPI PHY IP
What is Samsung 28nm FDSOI MIPI DPHY V1.1?
Samsung 28nm FDSOI MIPI DPHY V1.1 is a MIPI PHY IP core from VeriSilicon Microelectronics (Shanghai) Co., Ltd. listed on Semi IP Hub. It is listed with support for samsung Silicon Proven.
How should engineers evaluate this MIPI PHY?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this MIPI PHY IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.