Low-noise amplifier
LNA is consists of two bipolar amplifier stages.
Overview
LNA is consists of two bipolar amplifier stages. The block used correction circuit for extension frequency range. Amplifier output based on common collector circuit for low output impedance. Built-in bias circuit has temperature compensation and bias level control for optimal stages functioning. Internal amplifier supply filter provides supply noise suppression.
The block is designed on iHP SiGe BiCMOS 130 nm technology.
Key features
- iHP SiGe BiCMOS 130 nm
- Operating frequency range 3…5 GHz
- High gain (19.75 dB)
- Low noise figure (2.387 dB)
- High linearity
- Gain temperature compensation mode
- Build-in reference current source
- Internal matching network
- Small area
- Portable to other technologies (upon request)
Block Diagram
Applications
- Front-end RF signal amplification in receivers
What’s Included?
- Schematic or NetList
- Abstract model (.lef and .lib files)
- Layout view (optional)
- Behavioral model (Verilog)
- Extracted view (optional)
- GDSII
- DRC, LVS, antenna report
- Test bench with saved configurations (optional)
- Documentation
Specifications
Identity
Files
Note: some files may require an NDA depending on provider policy.
Provider
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Frequently asked questions about Amplifier IP cores
What is Low-noise amplifier?
Low-noise amplifier is a Amplifier IP core from NTLab listed on Semi IP Hub.
How should engineers evaluate this Amplifier?
Engineers should review the overview, key features, supported foundries and nodes, maturity, deliverables, and provider information before shortlisting this Amplifier IP.
Can this semiconductor IP be compared with similar products?
Yes. Buyers can compare this product with similar semiconductor IP cores or IP families based on category, provider, process options, and structured technical specifications.